{"title":"Defect Characterization of Advanced Packages using Novel Phase and Dark Field X-Ray Imaging","authors":"S. Lau, S. Gul, G. Zan, D. Vine, S. Lewis, W. Yun","doi":"10.31399/asm.edfa.2020-3.p018","DOIUrl":null,"url":null,"abstract":"\n Modified Talbot X-ray interferometry provides three contrast modes simultaneously: absorption, phase, and dark field/scattering. This article describes the powerful new imaging technique and shows how it is used to characterize various types of defects in advanced semiconductor packages.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"EDFA Technical Articles","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.31399/asm.edfa.2020-3.p018","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Modified Talbot X-ray interferometry provides three contrast modes simultaneously: absorption, phase, and dark field/scattering. This article describes the powerful new imaging technique and shows how it is used to characterize various types of defects in advanced semiconductor packages.
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