Pub Date : 2024-02-01DOI: 10.31399/asm.edfa.2024-1.p004
A. Johnston-Peck, A. Herzing
Four-dimensional scanning transmission electron microscopy (4D-STEM) is a spatially resolved electron diffraction technique that records the electron scattering distribution at each point of the electron beam raster, thereby producing a four-dimensional dataset. This second installment of this series presents applications of 4D-STEM, including measurements of crystal orientation and phase, short- and medium-range order, and internal electromagnetic fields.
{"title":"Four-Dimensional Scanning Transmission Electron Microscopy: Part II, Crystal Orientation and Phase, Short and Medium Range Order, and Electromagnetic Fields","authors":"A. Johnston-Peck, A. Herzing","doi":"10.31399/asm.edfa.2024-1.p004","DOIUrl":"https://doi.org/10.31399/asm.edfa.2024-1.p004","url":null,"abstract":"\u0000 Four-dimensional scanning transmission electron microscopy (4D-STEM) is a spatially resolved electron diffraction technique that records the electron scattering distribution at each point of the electron beam raster, thereby producing a four-dimensional dataset. This second installment of this series presents applications of 4D-STEM, including measurements of crystal orientation and phase, short- and medium-range order, and internal electromagnetic fields.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140464592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-02-01DOI: 10.31399/asm.edfa.2024-1.p024
Kirk A. Martin
This article is the third in a multi-part series describing techniques for thinning and polishing a highly warped die. Tighter thickness tolerance and thinner samples are always desired. The first article addressed global thinning of a sample. The second focused on the process and problems of thinning only the area of interest. This installment covers processes and considerations for both global and area of interest treatment and provides reference process recipes.
{"title":"Processes for Thinning and Polishing Highly Warped Die to a Nearly Consistent Thickness: Part III","authors":"Kirk A. Martin","doi":"10.31399/asm.edfa.2024-1.p024","DOIUrl":"https://doi.org/10.31399/asm.edfa.2024-1.p024","url":null,"abstract":"\u0000 This article is the third in a multi-part series describing techniques for thinning and polishing a highly warped die. Tighter thickness tolerance and thinner samples are always desired. The first article addressed global thinning of a sample. The second focused on the process and problems of thinning only the area of interest. This installment covers processes and considerations for both global and area of interest treatment and provides reference process recipes.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140463365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-02-01DOI: 10.31399/asm.edfa.2024-1.p002
Michael DiBattista
The second Electronics Resurgence Initiative (ERI 2.0), sponsored by the U.S. Defense Advanced Research Project Agency (DARPA) Microsystems Technology Office (MTO), is focused on driving next generation dual use microelectronics for national security and domestic needs. The initiative focuses on creating U.S. capability for three-dimensional heterogeneous integration (3DHI) manufacturing and pursuing focused research for the manufacture of complex 3D microsystems. This guest editorial describes the outcomes from a three-day summit (Seattle, Washington, August 2023) where the initiative was launched.
{"title":"The Electronics Resurgence Initiative 2.0 for U.S. Semiconductor Manufacturing","authors":"Michael DiBattista","doi":"10.31399/asm.edfa.2024-1.p002","DOIUrl":"https://doi.org/10.31399/asm.edfa.2024-1.p002","url":null,"abstract":"\u0000 The second Electronics Resurgence Initiative (ERI 2.0), sponsored by the U.S. Defense Advanced Research Project Agency (DARPA) Microsystems Technology Office (MTO), is focused on driving next generation dual use microelectronics for national security and domestic needs. The initiative focuses on creating U.S. capability for three-dimensional heterogeneous integration (3DHI) manufacturing and pursuing focused research for the manufacture of complex 3D microsystems. This guest editorial describes the outcomes from a three-day summit (Seattle, Washington, August 2023) where the initiative was launched.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140469384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-02-01DOI: 10.31399/asm.edfa.2024-1.p014
Jacob M. Garcia, A. Chiaramonti
New materials integration and improved design can be promoted by using atom probe tomography (APT) as an analysis technique. This article provides an overview of APT principles and setups and provides diverse examples that focus on its use to characterize electronic devices.
{"title":"Advanced Characterization of Materials Using Atom Probe Tomography","authors":"Jacob M. Garcia, A. Chiaramonti","doi":"10.31399/asm.edfa.2024-1.p014","DOIUrl":"https://doi.org/10.31399/asm.edfa.2024-1.p014","url":null,"abstract":"\u0000 New materials integration and improved design can be promoted by using atom probe tomography (APT) as an analysis technique. This article provides an overview of APT principles and setups and provides diverse examples that focus on its use to characterize electronic devices.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140470359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-11-01DOI: 10.31399/asm.edfa.2023-4.p012
Michael DiBattista, Scott Silverman, Matthew M. Mulholland
Laser-assisted copper deposition provides a key technology for analyzing complex packaging and integrated circuit challenges. Laser-based copper deposition techniques have been shown to be useful in combination with traditional FIB techniques to improve resistivity, deposition rate, and timing.
{"title":"Laser-Based Copper Deposition for Semiconductor Debug Applications","authors":"Michael DiBattista, Scott Silverman, Matthew M. Mulholland","doi":"10.31399/asm.edfa.2023-4.p012","DOIUrl":"https://doi.org/10.31399/asm.edfa.2023-4.p012","url":null,"abstract":"Laser-assisted copper deposition provides a key technology for analyzing complex packaging and integrated circuit challenges. Laser-based copper deposition techniques have been shown to be useful in combination with traditional FIB techniques to improve resistivity, deposition rate, and timing.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139295094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-11-01DOI: 10.31399/asm.edfa.2023-4.p028
James Vickers, Blake Freeman, Neel Leslie
A scanning electron microscope system measures voltage contrast on device-under-test surfaces. This article addresses a limited set of applications that rely on voltage contrast (VC) measurements in SEM systems, showing how VC measurements can probe electrical activity running at speeds as high as 2 GHz on modern active integrated circuits.
{"title":"Voltage Contrast within Electron Microscopy: From a Curious Effect to Debugging Modern ICs","authors":"James Vickers, Blake Freeman, Neel Leslie","doi":"10.31399/asm.edfa.2023-4.p028","DOIUrl":"https://doi.org/10.31399/asm.edfa.2023-4.p028","url":null,"abstract":"A scanning electron microscope system measures voltage contrast on device-under-test surfaces. This article addresses a limited set of applications that rely on voltage contrast (VC) measurements in SEM systems, showing how VC measurements can probe electrical activity running at speeds as high as 2 GHz on modern active integrated circuits.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139299723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-11-01DOI: 10.31399/asm.edfa.2023-4.p004
Joseph W. Fowler, P. Szypryt, D. Swetz, Zachary H. Levine
The high energy-resolving power of superconducting x-ray detectors reduces unwanted x-ray backgrounds, uses x-ray photons efficiently, and allows for discrimination among multiple chemical elements in a sample. This article discusses the challenges of analyzing the internal structure and composition of integrated circuits, and how 3D imaging can benefit manufacturers and researchers. It covers the development of superconducting x-ray sensors, their advantages over traditional sensors, potential applications, and focus areas for future work to develop this technology.
超导 X 射线探测器的高能量分辨能力可减少不必要的 X 射线背景，有效利用 X 射线光子，并可区分样品中的多种化学元素。本文讨论了分析集成电路内部结构和组成所面临的挑战，以及三维成像如何使制造商和研究人员受益。文章介绍了超导 X 射线传感器的发展、与传统传感器相比的优势、潜在应用以及未来开发该技术的重点领域。
{"title":"Superconducting X-ray Sensors for Tomography of Microelectronics","authors":"Joseph W. Fowler, P. Szypryt, D. Swetz, Zachary H. Levine","doi":"10.31399/asm.edfa.2023-4.p004","DOIUrl":"https://doi.org/10.31399/asm.edfa.2023-4.p004","url":null,"abstract":"The high energy-resolving power of superconducting x-ray detectors reduces unwanted x-ray backgrounds, uses x-ray photons efficiently, and allows for discrimination among multiple chemical elements in a sample. This article discusses the challenges of analyzing the internal structure and composition of integrated circuits, and how 3D imaging can benefit manufacturers and researchers. It covers the development of superconducting x-ray sensors, their advantages over traditional sensors, potential applications, and focus areas for future work to develop this technology.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139304725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-11-01DOI: 10.31399/asm.edfa.2023-4.p020
D. Sharma, M. Tedaldi, Patrick Hole, A.D.L. Humphris, L. Wouters, T. Hantschel, U. Celano
This article describes recent advancements in multi-probe sensing schemes and development of a tomographic atomic force microscopy tool for materials research and failure analysis.
本文介绍了多探针传感方案的最新进展，以及用于材料研究和失效分析的层析原子力显微镜工具的开发情况。
{"title":"An Innovative Multi-Probe Tomographic Atomic Force Microscope for Materials Research and Failure Analysis","authors":"D. Sharma, M. Tedaldi, Patrick Hole, A.D.L. Humphris, L. Wouters, T. Hantschel, U. Celano","doi":"10.31399/asm.edfa.2023-4.p020","DOIUrl":"https://doi.org/10.31399/asm.edfa.2023-4.p020","url":null,"abstract":"This article describes recent advancements in multi-probe sensing schemes and development of a tomographic atomic force microscopy tool for materials research and failure analysis.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139302449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-11-01DOI: 10.31399/asm.edfa.2023-4.p057
Lesly Endrinal, S. H. Goh
The EDFAS Die-Level Roadmap Committee was formed to identify forthcoming challenges related to electrical fault isolation within the next five years and collaborate with various stakeholders, including industry, academia, and tool vendors, to devise practical solutions. To that end, the team has pinpointed five critical areas of focus: (1) laser-based, photon emission, and thermal; (2) 2D/2.5D/3D packaging; (3) product yield, test, and diagnostics; (4) general (leading edge technologies); and (5) system level, analog/RF, and digital functional.
{"title":"The EDFAS FA Technology Roadmap—Die-Level Roadmap Council (DLRC)","authors":"Lesly Endrinal, S. H. Goh","doi":"10.31399/asm.edfa.2023-4.p057","DOIUrl":"https://doi.org/10.31399/asm.edfa.2023-4.p057","url":null,"abstract":"The EDFAS Die-Level Roadmap Committee was formed to identify forthcoming challenges related to electrical fault isolation within the next five years and collaborate with various stakeholders, including industry, academia, and tool vendors, to devise practical solutions. To that end, the team has pinpointed five critical areas of focus: (1) laser-based, photon emission, and thermal; (2) 2D/2.5D/3D packaging; (3) product yield, test, and diagnostics; (4) general (leading edge technologies); and (5) system level, analog/RF, and digital functional.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139298784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-08-01DOI: 10.31399/asm.edfa.2023-3.p023
Frieder Baumann, Brian Popielarski, Ryan Sweeney, Felix Beaudoin, K. Giewont
This article introduces silicon photonics, describes what is needed for photonics failure analysis, and shows examples of analysis results for failures in modern silicon photonics circuits.
本文介绍了硅光子学，介绍了硅光子学失效分析的必要条件，并给出了现代硅光子学电路失效分析结果的实例。
{"title":"Failure Analysis of Photonic Integrated Circuits","authors":"Frieder Baumann, Brian Popielarski, Ryan Sweeney, Felix Beaudoin, K. Giewont","doi":"10.31399/asm.edfa.2023-3.p023","DOIUrl":"https://doi.org/10.31399/asm.edfa.2023-3.p023","url":null,"abstract":"\u0000 This article introduces silicon photonics, describes what is needed for photonics failure analysis, and shows examples of analysis results for failures in modern silicon photonics circuits.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133125375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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