Shuangshuang Zhang, Ting Li, Lele Jin, Jiaqi Yang, Lin He, F. Lin
{"title":"A 11-bit 1.2V 40.3μW SAR ADC with self-dithering technique","authors":"Shuangshuang Zhang, Ting Li, Lele Jin, Jiaqi Yang, Lin He, F. Lin","doi":"10.1109/IEEE-IWS.2016.7585432","DOIUrl":null,"url":null,"abstract":"This paper presents a low-power 11-bit 1-MS/s successive approximation register (SAR) analog-to-digital converter (ADC) that uses a self-dithering technique. The LSBs is employed as a dither to improve the resolution. Compared to converters that use the conventional dithering architecture, simulation results show that the proposed self-dithering technique improve the DNL performance with simplified hardware. The prototype is fabricated in 180nm 1P6M CMOS with MOM capacitor. At a 1.2-V supply and 1 MS/s, the post-layout simulation result shows an SNDR of 63.8 dB and consumes 40.3μW, and a figure of merit (FOM) of 32 fJ/conversion-step. The total area of the chip is 1 mm×1 mm.","PeriodicalId":185971,"journal":{"name":"2016 IEEE MTT-S International Wireless Symposium (IWS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE MTT-S International Wireless Symposium (IWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEEE-IWS.2016.7585432","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This paper presents a low-power 11-bit 1-MS/s successive approximation register (SAR) analog-to-digital converter (ADC) that uses a self-dithering technique. The LSBs is employed as a dither to improve the resolution. Compared to converters that use the conventional dithering architecture, simulation results show that the proposed self-dithering technique improve the DNL performance with simplified hardware. The prototype is fabricated in 180nm 1P6M CMOS with MOM capacitor. At a 1.2-V supply and 1 MS/s, the post-layout simulation result shows an SNDR of 63.8 dB and consumes 40.3μW, and a figure of merit (FOM) of 32 fJ/conversion-step. The total area of the chip is 1 mm×1 mm.