Electrical and optical properties characterization of MEH-PPV thin film using sol-gel method

H. Hashim, S. S. Shariffudin, A. Khairuddin, M. Sarah, M. Rusop
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Abstract

Light-emitting diode (LED) applications consist of various materials. One of the materials used is polymer. In this study, MEH-PPV known as poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1, 4-phenylenevinylene] was used. The objective of this paper is to characterize the electrical and optical properties of MEH-PPV thin film by using sol-gel method. The scope is to study only the MEH-PPV thin film without implementation to any device. The MEH-PPV thin film thicknesses were varied from 10 to 100 nm. The experiment was started by stirring the sol-gel solution with toluene. The spin-coating technique was used to deposit the MEH-PPV thin film on a glass substrate. All samples were characterized using Atomic Force Microscopy (AFM), Surface Profiler, Two-point Probe, Raman PL Dispersive and UV-Vis Spectroscopy for the surface morphologies, thin film thickness, electrical and optical properties respectively. From the current-voltage (I-V) measurement, it show that symmetrical line plotted at low-voltage ranges. Moreover, the calculated conductivity was inversely proportional with the thin film thickness. The results from photoluminescence (PL) spectra showed that the intensity reached optimum peak at 38nm thickness and quenched for other samples. At 108 nm of thickness, absorption reached the highest peak compared to other samples of different thickness. The film was non-uniformed for the thickness at 134 nm, due to aggregation phenomenon.
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溶胶-凝胶法表征MEH-PPV薄膜的电学和光学性质
发光二极管(LED)的应用包括各种材料。其中一种使用的材料是聚合物。在本研究中,MEH-PPV被称为聚[2-甲氧基-5-(2'-乙基-己基氧基)- 1,4 -苯基乙烯]。本文的目的是用溶胶-凝胶法表征MEH-PPV薄膜的电学和光学性质。本研究仅研究MEH-PPV薄膜,未将其应用于任何器件。MEH-PPV薄膜厚度从10 ~ 100 nm不等。实验是通过用甲苯搅拌溶胶-凝胶溶液开始的。采用自旋镀膜技术在玻璃基板上沉积MEH-PPV薄膜。采用原子力显微镜(AFM)、表面轮廓仪(Surface Profiler)、两点探针(Two-point Probe)、拉曼光谱(Raman PL色散)和紫外可见光谱(UV-Vis Spectroscopy)分别对样品的表面形貌、薄膜厚度、电学和光学性质进行了表征。从电流-电压(I-V)测量中,可以看出在低压范围内绘制的对称线。计算得到的电导率与薄膜厚度成反比。光致发光(PL)光谱结果表明,在厚度为38nm处强度达到最佳峰,其他样品的光致发光强度均淬灭。在厚度为108 nm处,与其他不同厚度的样品相比,吸收峰达到最高。在134 nm处,由于聚集现象,膜的厚度不均匀。
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