{"title":"High-sensitivity regulated inverter cascode transimpedance amplifier for near infrared spectroscopy","authors":"A. Atef, M. Atef, M. Abbas, E. Khaled","doi":"10.1109/JEC-ECC.2016.7518977","DOIUrl":null,"url":null,"abstract":"This paper presents a design and a post layout simulation of a high-sensitivity low-power transimpedance amplifier (TIA) for frequency domain near infrared spectroscopy (FD-NIRS). The TIA consumes 340 μW from a 1.2 V DC supply. This low power is necessary for NIRS device portability. The proposed TIA achieves 104.8 dBΩ transimpedance gain, 50 MHz bandwidth and 15.1 nArms total integrated input noise current for 2 pF off chip photodiode capacitance. The demonstrated TIA is simulated using 130 nm CMOS technology and occupies an area of 0.0012 mm2. Post amplifier stage is presented to increase the total gain. The complete NIRS optical receiver achieves 119.5 dBΩ gain, 49.2 MHz bandwidth, 15.4 nArms total integrated input noise current and consumes 400 μW from a 1.2 V DC supply.","PeriodicalId":362288,"journal":{"name":"2016 Fourth International Japan-Egypt Conference on Electronics, Communications and Computers (JEC-ECC)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 Fourth International Japan-Egypt Conference on Electronics, Communications and Computers (JEC-ECC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/JEC-ECC.2016.7518977","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
This paper presents a design and a post layout simulation of a high-sensitivity low-power transimpedance amplifier (TIA) for frequency domain near infrared spectroscopy (FD-NIRS). The TIA consumes 340 μW from a 1.2 V DC supply. This low power is necessary for NIRS device portability. The proposed TIA achieves 104.8 dBΩ transimpedance gain, 50 MHz bandwidth and 15.1 nArms total integrated input noise current for 2 pF off chip photodiode capacitance. The demonstrated TIA is simulated using 130 nm CMOS technology and occupies an area of 0.0012 mm2. Post amplifier stage is presented to increase the total gain. The complete NIRS optical receiver achieves 119.5 dBΩ gain, 49.2 MHz bandwidth, 15.4 nArms total integrated input noise current and consumes 400 μW from a 1.2 V DC supply.
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