{"title":"Low turn-on voltage AlGaInP LEDs using thermally evaporated transparent conducting Indium-Tin-Oxide (ITO)","authors":"Y. Aliyu, D. Morgan, H. Thomas, S. Bland","doi":"10.1109/EDMO.1995.493699","DOIUrl":null,"url":null,"abstract":"Low turn-on voltage AlGaInP/GaInP surface emitting LEDs have been achieved using a thermally evaporated transparent conducting Indium Tin Oxide (ITO) layer. The devices have lower forward series resistance (1-3) ohms compared to standard Au/Zn devices which have a series resistance greater than 5 ohms. The ITO/AlGaInP LEDs emit orange light, with a peak wavelength of 600 nm and full width at half maximum (FWHM) of 15 nm. A forward voltage of typically 1.70 V at 20 mA was obtained. Variations in the thicknesses of the cladding and GaAs cap layer thicknesses did not cause any significant change in the device turn-on voltages. Evidence of reduced junction heating has been observed.","PeriodicalId":431745,"journal":{"name":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","volume":"66 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDMO.1995.493699","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Low turn-on voltage AlGaInP/GaInP surface emitting LEDs have been achieved using a thermally evaporated transparent conducting Indium Tin Oxide (ITO) layer. The devices have lower forward series resistance (1-3) ohms compared to standard Au/Zn devices which have a series resistance greater than 5 ohms. The ITO/AlGaInP LEDs emit orange light, with a peak wavelength of 600 nm and full width at half maximum (FWHM) of 15 nm. A forward voltage of typically 1.70 V at 20 mA was obtained. Variations in the thicknesses of the cladding and GaAs cap layer thicknesses did not cause any significant change in the device turn-on voltages. Evidence of reduced junction heating has been observed.
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