Li Mo, Sun Peng, Zhang Jian, Li Jie, Qiao Chunhua, Li Linzhe, X. Li-yi
{"title":"Research on laser radiation for simulating dose rate effects in semiconductor materials","authors":"Li Mo, Sun Peng, Zhang Jian, Li Jie, Qiao Chunhua, Li Linzhe, X. Li-yi","doi":"10.1109/ICEICT.2016.7879762","DOIUrl":null,"url":null,"abstract":"In this paper, a laser radiation model based on TCAD is built up. With this model, some simulations of laser irradiating semiconductor material are presented. And also simulations of gamma ray irradiating semiconductor material are given. By comparing the simulation results the relationship between laser intensity and gamma dose rate is obtained. The results demonstrate that the laser radiation model is practicable in TCAD for reliability analysis and the laser simulation technique is reliable to simulate dose rate effect.","PeriodicalId":224387,"journal":{"name":"2016 IEEE International Conference on Electronic Information and Communication Technology (ICEICT)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Conference on Electronic Information and Communication Technology (ICEICT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEICT.2016.7879762","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, a laser radiation model based on TCAD is built up. With this model, some simulations of laser irradiating semiconductor material are presented. And also simulations of gamma ray irradiating semiconductor material are given. By comparing the simulation results the relationship between laser intensity and gamma dose rate is obtained. The results demonstrate that the laser radiation model is practicable in TCAD for reliability analysis and the laser simulation technique is reliable to simulate dose rate effect.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
