Relationship between defects and the dielectric and transport properties of SrTiO3 thin films

2008 17th IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2008-12-02 DOI:10.1109/ISAF.2008.4693915

J. Son, J. Cagnon, N. H. Finstrom, D. Boesch, J. Lu, S. Stemmer

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引用次数: 1

Abstract

We report on some of the key properties of ferroelectric and high-permittivity thin films relevant for their application in metal/insulator/metal structures, such as voltage tunable capacitors and novel memories. We use a model system, Pt/SrTiO3/Pt thin film structures, with microstructures, stress states and point defects characterized by advanced transmission electron microscopy techniques, high-resolution x-ray diffraction and wafer curvature measurements. We investigate the relation between defects and dielectric properties, measured at frequencies up to 1 GHz. We discuss the origins of dielectric losses in these films and the role of point defects, such as oxygen vacancies. We report on dielectric deadlayers, which cause a significant reduction in the dielectric tunabilities. We discuss the influence of dielectric relaxation on the thermal leakage characteristics of textured and epitaxial Pt/SrTiO3/Pt thin film structures. We also discuss the properties of Pt/SrTiO3/Pt structures with ultrathin (5 ¿ 10 nm) SrTiO3 films.

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SrTiO3薄膜的介电和输运特性与缺陷的关系

我们报告了铁电和高介电常数薄膜的一些关键特性，这些特性与它们在金属/绝缘体/金属结构中的应用有关，例如电压可调电容器和新型存储器。我们使用了一个模型系统，Pt/SrTiO3/Pt薄膜结构，通过先进的透射电子显微镜技术，高分辨率x射线衍射和晶圆曲率测量来表征微观结构，应力状态和点缺陷。我们研究了缺陷和介电性能之间的关系，测量频率高达1ghz。我们讨论了这些薄膜中介电损耗的来源以及点缺陷(如氧空位)的作用。我们报道了电介质死源层，它能显著降低电介质的不稳定性。讨论了介质弛豫对织构和外延Pt/SrTiO3/Pt薄膜结构热泄漏特性的影响。我们还讨论了超薄(5¿10 nm) SrTiO3薄膜的Pt/SrTiO3/Pt结构的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2008 17th IEEE International Symposium on the Applications of Ferroelectrics

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