Bi-color light emitting diode based on the bias dependent collection of electrons and holes in quantum wells

Abstract

A three terminal dual wavelength light emitter based on selective carrier injection and the bias dependent collection of electrons and holes in quantum wells is reported. The emission wavelength is selected by an applied voltage and the emission intensity is independently modulated by an applied current. The device exhibits coaxial optical output, a large wavelength separation (570 A), low operational voltages ( 0) at 77K. Having selected the wavelength with IV1k2.1 V the optical output power can be modulated by modulating I2 without loss of wavelength selectivity. Wavelength switching can be accomplished while maintaining a high contrast ratio and optical output power. The details of the growth, fabrication and method of operation of this bias induced color tuned emitter will be presented. Application of this carrier collection control to achieve other device functions will be briefly discussed.