3.1 POWER9™: A processor family optimized for cognitive computing with 25Gb/s accelerator links and 16Gb/s PCIe Gen4

Christopher J. Gonzalez, E. Fluhr, D. Dreps, David Hogenmiller, R. Rao, Jose Paredes, M. Floyd, M. Sperling, Ryan Kruse, Vinod Ramadurai, R. Nett, M. S. Islam, J. Pille, D. Plass
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引用次数: 14

Abstract

Cognitive computing and cloud infrastructure require flexible, connectable, and scalable processors with extreme IO bandwidth. With 4 distinct chip configurations, the POWER9 family of chips delivers multiple options for memory ports, core thread counts, and accelerator options to address this need. The 24-core scale-out processor is implemented in 14nm SOI FinFET technology [1] and contains 8.0B transistors. The 695mm2 chip uses 17 levels of copper interconnect: 3–64nm, 2–80nm, 4–128nm, 2–256nm, 4–360nm pitch wiring for signals and 2– 2400nm pitch wiring levels for power and global clock distribution. Digital logic uses three thin-oxide transistor Vts to balance power and performance requirements, while analog and high-voltage circuits eliminated thick-oxide devices providing process simplification and cost reduction. By leveraging the FinFET's increased current per area, the base standard cell image shrunk from 18 tracks per bit in planar 22nm to 10 tracks per bit in 14nm providing additional area scaling.
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3.1 POWER9™:为认知计算优化的处理器系列,具有25Gb/s加速器链路和16Gb/s PCIe Gen4
认知计算和云基础设施需要灵活、可连接和可扩展的处理器,并具有极高的IO带宽。通过4种不同的芯片配置,POWER9芯片家族为内存端口、核心线程数和加速器选项提供了多种选项,以满足这一需求。24核横向扩展处理器采用14nm SOI FinFET技术[1],包含8.0B晶体管。695mm2芯片使用17级铜互连:3-64nm, 2 - 80nm, 4-128nm, 2 - 256nm, 4-360nm间距布线用于信号,2 - 2400nm间距布线用于电源和全局时钟分布。数字逻辑使用三个薄氧化物晶体管Vts来平衡功率和性能要求,而模拟和高压电路则消除了厚氧化物器件,从而简化了工艺并降低了成本。通过利用FinFET增加的每面积电流,基本标准单元图像从平面22nm的18个磁道/位缩小到14nm的10个磁道/位,提供了额外的面积缩放。
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