{"title":"Reliability evaluation method of low temperature poly-silicon TFTs using dynamic stress","authors":"Y. Uraoka, T. Hatayama, T. Fuyuki","doi":"10.1109/ICMTS.2000.844424","DOIUrl":null,"url":null,"abstract":"Evaluation method of reliability of low temperature poly-Si using dynamic stress is proposed. Decrease of mobility and ON current was observed under the dynamic stress. We have found that the degradation depends strongly on falling time and the number of repetition. This degradation is dominated by hot electrons and can be improved by adopting LDD structures.","PeriodicalId":447680,"journal":{"name":"ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2000.844424","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Evaluation method of reliability of low temperature poly-Si using dynamic stress is proposed. Decrease of mobility and ON current was observed under the dynamic stress. We have found that the degradation depends strongly on falling time and the number of repetition. This degradation is dominated by hot electrons and can be improved by adopting LDD structures.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
