Songyuan Yang, Weihua Yu, Xinxin Yang, X. Lv, H. Zirath, Z. He
{"title":"A Terahertz-wave Double-Band Transition from Substrate Integrated Waveguide to Rectangular Waveguide for InP MMIC","authors":"Songyuan Yang, Weihua Yu, Xinxin Yang, X. Lv, H. Zirath, Z. He","doi":"10.1109/CICTA.2018.8706119","DOIUrl":null,"url":null,"abstract":"A double-band terahertz slot transition from the substrate integrated waveguide (SIW) to the rectangular waveguide (RWG) is presented. With better than 10 dB return loss (RL) and 1.3 dB insertion loss (IL) demonstrated by full-EM simulation, the frequency bands of a designed sample are from 164.6 GHz to 182.76 GHz and from 238 GHz to 257.9 GHz. The presented transition is suitable for multilayer MMIC process, especially for the substrate with high loss and high dielectric constant.","PeriodicalId":186840,"journal":{"name":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICTA.2018.8706119","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A double-band terahertz slot transition from the substrate integrated waveguide (SIW) to the rectangular waveguide (RWG) is presented. With better than 10 dB return loss (RL) and 1.3 dB insertion loss (IL) demonstrated by full-EM simulation, the frequency bands of a designed sample are from 164.6 GHz to 182.76 GHz and from 238 GHz to 257.9 GHz. The presented transition is suitable for multilayer MMIC process, especially for the substrate with high loss and high dielectric constant.