Fanout in quantum dot cellular automata

K. Yadavalli, A. Orlov, R. Kummamuru, C. Lent, G. Bernstein, G. Snider
{"title":"Fanout in quantum dot cellular automata","authors":"K. Yadavalli, A. Orlov, R. Kummamuru, C. Lent, G. Bernstein, G. Snider","doi":"10.1109/DRC.2005.1553085","DOIUrl":null,"url":null,"abstract":"In this report, we describe the fabrication and experimental demonstration of fanout in QCA. Fanout is important as it is necessary for complex digital logic circuits and is essential for generating compact designs, as multiple cells can be then driven by a single driver cell. Fanout in QCA is also a direct demonstration of power gain in QCA circuits. The device is realized using metal islands (as quantum dots) and multiple tunnel junctions (MTJs) fabricated using Dolan bridge technique (Fulton, 1987). The circuit consists of three latches, with the latch in the first stage (L1) capacitively coupled to the two latches of the second stage (L2 and L3). The goal of the experiment is to switch L2 and L3 simultaneously using L1 as an input driving both L2 and L3. Each latch is formed by three quantum dots with the middle dot being connected to the end dots by MTJs","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"63rd Device Research Conference Digest, 2005. DRC '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2005.1553085","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9

Abstract

In this report, we describe the fabrication and experimental demonstration of fanout in QCA. Fanout is important as it is necessary for complex digital logic circuits and is essential for generating compact designs, as multiple cells can be then driven by a single driver cell. Fanout in QCA is also a direct demonstration of power gain in QCA circuits. The device is realized using metal islands (as quantum dots) and multiple tunnel junctions (MTJs) fabricated using Dolan bridge technique (Fulton, 1987). The circuit consists of three latches, with the latch in the first stage (L1) capacitively coupled to the two latches of the second stage (L2 and L3). The goal of the experiment is to switch L2 and L3 simultaneously using L1 as an input driving both L2 and L3. Each latch is formed by three quantum dots with the middle dot being connected to the end dots by MTJs
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
量子点元胞自动机的扇出
本文描述了QCA中扇出的制作和实验演示。扇出很重要,因为它对于复杂的数字逻辑电路是必要的,并且对于生成紧凑的设计是必不可少的,因为多个单元可以由单个驱动单元驱动。QCA中的扇出也是QCA电路中功率增益的直接体现。该装置使用金属岛(作为量子点)和使用多兰桥技术制造的多个隧道结(MTJs)来实现(Fulton, 1987)。电路由三个锁存器组成,其中第一级(L1)的锁存器电容耦合到第二级(L2和L3)的两个锁存器。实验的目标是同时切换L2和L3,使用L1作为驱动L2和L3的输入。每个锁存器由三个量子点组成,中间点通过mtj连接到末端点
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
High-power stable field-plated AlGaN-GaN MOSHFETs A new four-terminal hybrid silicon/organic field-effect sensor device Tunnel junctions in GaN/AlN for optoelectronic applications Data retention behavior in the embedded SONOS nonvolatile memory cell Mobility and sub-threshold characteristics in high-mobility dual-channel strained Si/strainef SiGe p-MOSFETs
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1