{"title":"High Performance Elastic Connection for Reliable Device Testing","authors":"K. Hiwada, T. Tamura","doi":"10.1109/ICMCM.1994.753557","DOIUrl":null,"url":null,"abstract":"We propose the newly developed contact scheme for high performance DUT (Device Under Test) interface, so called, HiPEC (High Performance Elastic Connection). The HiPEC consists of Ni based micro- bumps with Cu line-pattern on P-PTFE (Porous Poly Tetra Fluoro Ethylene) membrane, supported by silicon rubber elastoma. The metal contact via micro-bump makes a reliable contact by scratching action, generated by shape transformation of elastoma under small force. The P-PTFE membrane is usable beyond 10 GHz high frequency signal transmission, and has excellent high isolation characteristics with less than sub-pA leakage current. The HiPEC technology is useful for high pin count DUT interface with high performance, replacing contact-pin, and also for die chip contact to enable KGD (Known- Good Die) test of mixed signals MCM (Multi Chip Module).","PeriodicalId":363745,"journal":{"name":"Proceedings of the International Conference on Multichip Modules","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the International Conference on Multichip Modules","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMCM.1994.753557","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We propose the newly developed contact scheme for high performance DUT (Device Under Test) interface, so called, HiPEC (High Performance Elastic Connection). The HiPEC consists of Ni based micro- bumps with Cu line-pattern on P-PTFE (Porous Poly Tetra Fluoro Ethylene) membrane, supported by silicon rubber elastoma. The metal contact via micro-bump makes a reliable contact by scratching action, generated by shape transformation of elastoma under small force. The P-PTFE membrane is usable beyond 10 GHz high frequency signal transmission, and has excellent high isolation characteristics with less than sub-pA leakage current. The HiPEC technology is useful for high pin count DUT interface with high performance, replacing contact-pin, and also for die chip contact to enable KGD (Known- Good Die) test of mixed signals MCM (Multi Chip Module).