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Stress Development During High Dielectric Ceramic Thin Films Processing 高介电陶瓷薄膜加工过程中的应力发展
Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753574
K. Boggs, D. Wilcox, D. A. Payne, L. Allen
High dielectric ceramic thin films incorporated into microelectronic packaging will extend both the performance and functions of advanced microelectronic packaging. The low processing temperatures, excellent composition control and low capital manufacturing costs may make the sol-gel film preparation route a prime manufacturing method. For this technique to be a useful alternative to competing vacuum deposition methods, the interactions between the commonly employed packaging materials set and the Sol gel derived films must be understood. To integrate these films into applications the development of thin film stresses and resulting defects must be understood. In this study, we are examining the processing of sol-gel derived barium titanate thin films for use as integrated decoupling capacitors as our model system. Stress measurements are made by measuring curvature of thin film coated wafers as a function of temperature and time. The films exhibit both plastic and elastic behavior at different processing stages. These films are microscopically examined to observe the formation of microstructure including cracking and pinholes. By tailoring the thermal process to the viscoelastic film behavior high quality films may be produced.
高介电陶瓷薄膜应用于微电子封装,将扩展先进微电子封装的性能和功能。较低的加工温度、良好的成分控制和较低的资本制造成本可能使溶胶-凝胶膜制备路线成为主要的制造方法。为了使该技术成为一种有用的替代真空沉积方法,必须了解常用包装材料集和溶胶-凝胶衍生膜之间的相互作用。为了将这些薄膜整合到应用中,必须了解薄膜应力和由此产生的缺陷的发展。在这项研究中,我们正在研究溶胶-凝胶衍生的钛酸钡薄膜的加工,作为我们的模型系统的集成去耦电容器。应力测量是通过测量薄膜涂层晶圆的曲率作为温度和时间的函数来实现的。薄膜在不同的加工阶段均表现出塑性和弹性特性。这些薄膜在显微镜下观察到微观结构的形成,包括裂纹和针孔。根据粘弹性薄膜的特性来调整热过程,可以生产出高质量的薄膜。
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引用次数: 0
Mechanical Punching of Through-Holes in Thin Laminates for Higher Density MCM-L Fabrication 用于高密度MCM-L制造的薄层板通孔机械冲孔
Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753547
T. Tessier, B. Adams
This paper outlines a detailed study of the mechanical punching of a variety of non-glass reinforced thin laminates which was carried out to confirm the feasibility of this through-hole generation process. Mechanical punching equipment capable of punching up to 12 holes per second used for this evaluation is capable of generating through-holes down to 60 /spl mu/m in diameter in 50-100 /spl mu/m thick films of an assortment of copper clad thin laminate materials were demonstrated and the salient process parameters discussed. Processes for the fabrication of MCM-L substrates and higher density PWB's using mechanically punched through-holes were also presented.
本文对各种非玻璃增强薄层板的机械冲压工艺进行了详细的研究,以证实该通孔工艺的可行性。用于本次评估的机械冲孔设备能够每秒打孔12个孔,能够在50-100 /spl mu/m厚的各种覆铜薄层压板材料薄膜上产生直径小于60 /spl mu/m的通孔,并讨论了主要工艺参数。本文还介绍了利用机械冲孔制备MCM-L衬底和高密度PWB的工艺。
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引用次数: 1
MCM-L Technology: A Systems Cost Analysis for a High Volume Automotive Electronics Application MCM-L技术:大批量汽车电子应用的系统成本分析
Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753570
J. Evans, L. Bosley, C. S. Romanczuk, R.W. Johnson
Cost concerns related to the development and manufacturability of multichip modules have limited the wide spread use of MCMs for high-volume, low-cost applications. This paper discusses the many elements necessary to fully evaluate the financial effects of MCM programs. In particular, this paper evaluates a development program for a multichip module design targeted for a high volume automotive electronics control module. Often the added material costs associated with multichip modules prohibit MCM usage for low cost applications. This paper deals with the overall costs and savings associated with MCM development. While each decision to incorporate MCMs within a product design must be made individually, the analysis detailed below provides considerable insight into the overall systems cost involved with MCMs.
与多芯片模块的开发和可制造性相关的成本问题限制了mcm在大批量、低成本应用中的广泛使用。本文讨论了充分评估MCM计划的财务效果所需的许多要素。特别是,本文评估了针对大批量汽车电子控制模块的多芯片模块设计的开发方案。通常,与多芯片模块相关的附加材料成本阻碍了MCM在低成本应用中的使用。本文讨论与MCM开发相关的总体成本和节省。虽然在产品设计中纳入mcm的每个决策都必须单独做出,但下面详细的分析提供了对mcm所涉及的整体系统成本的相当深入的了解。
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引用次数: 5
Cu/Photosensitive-BCB Thin-Film Multilayer Technology for High-Performance Multichip Module 用于高性能多芯片模块的Cu/光敏- bcb薄膜多层技术
Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753538
T. Shimoto, K. Matsui, K. Utsumi
A new MCM-D technology which enables reliable fabrication of high-performance and low cost MCMs has been developed. The technology is based on Cu/Photosensitive-BCB thin-film multilayer structure. The fabrication process is reduced by using the newly developed Photosensitive-BCB, with a conventional photolythography process. The flexibility on design rules is allowed, because the Cu/BCB structure has the advantages of excellent planarization, and low electrical resistance of signal line. Long-term reliability test was successfully done; thermal cycle(-45/spl deg/C/125/spl deg/), high-temperature aging at 125/spl deg/C, and high-temperature/humidity(85/spl deg/C/85%). A prototype of high-density RISC module fabricated with the developed technology passed all the long-term reliability tests. The excellent electrical performance was also proved through the signal transmission tests with the prototype module.
一种新的MCM-D技术能够可靠地制造高性能和低成本的mcm。该技术基于Cu/光敏- bcb薄膜多层结构。采用新开发的光敏- bcb,减少了传统光刻工艺的制造过程。Cu/BCB结构具有平整度好、信号线电阻低的优点,允许设计规则的灵活性。长期可靠性试验成功;热循环(-45/spl°C/125/spl°C),高温老化(125/spl°C/高温),高温/湿度(85/spl°C/85%)。采用该技术制作的高密度RISC模块样机通过了所有长期可靠性测试。通过样机模块的信号传输测试,验证了其优良的电气性能。
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引用次数: 16
Volume Implementation of MCM-D Based Cache SRAM Products for Workstation and PC Applications 基于MCM-D的工作站和PC应用缓存SRAM产品的批量实现
Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753569
S. Mok
Multichip modules have been used in large numbers of memory applications for over ten years. This paper outlines the use of MCM-D in a high-performance family of SRAM modules designed to take advantage of a number of recent changes in the MCM infrastructure. The products are designed for high volume, high-performance, relatively cost-sensitive insertions in support of current and next-generation microprocessor-based system families. This paper discusses the design and implementation of MicroModule System's ChipFrame cache SRAMS. Included are a discussion of package alternatives reviewed prior to standardization on 28mm 160-lead PQFP, the test strategies employed by both IC suppliers and the MCM foundry, and a summary of reliability programs used in product development and design verification. The discussion will also include sample system implementations using these MCMs.
多芯片模块已经在大量存储应用中使用了十多年。本文概述了MCM- d在高性能SRAM模块系列中的使用,这些模块旨在利用MCM基础架构的一些最新变化。该产品专为大批量,高性能,相对成本敏感的插入而设计,以支持当前和下一代基于微处理器的系统系列。本文讨论了MicroModule System的ChipFrame高速缓存sram的设计与实现。其中包括在28mm 160引脚PQFP标准化之前审查的封装替代方案的讨论,IC供应商和MCM代工厂采用的测试策略,以及产品开发和设计验证中使用的可靠性计划的总结。讨论还将包括使用这些mcm的示例系统实现。
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引用次数: 2
A Process for the Manufacture of Cost Competitive MCM Substrates 具有成本竞争力的MCM基板制造工艺
Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753548
G. Gengel
This paper will deal with the issues involved with designing a substrate construction and it's associated manufacturing process for cost competitive applications. The substrate system consists of copper-polyimide high density 'layer-pairs' laminated together with an anisotropic conductive adhesive system. The resulting structure has theoretical routing densities on the order of 800 inches/in/sup 2/ per layer pair. The process of manufacturing is based upon roll-to-roll manufacturing techniques pioneered by flexible circuit manufacturers. The parts are kept in roll form until layer pair lamination, avoiding unnecessary handling and damage. However, the manufacturing process has been significantly revised to allow for successful manufacturing of MCMs.
本文将讨论与设计基板结构相关的问题,以及与成本竞争应用相关的制造过程。基材系统由铜-聚酰亚胺高密度“层对”层合组成,并与各向异性导电胶粘剂系统层合在一起。所得结构的理论布线密度约为每层对800英寸/英寸/sup 2/。制造过程是基于由柔性电路制造商开创的卷对卷制造技术。在层对层压之前,零件保持卷形,避免不必要的搬运和损坏。然而,制造过程已经进行了重大修改,以允许mcm的成功制造。
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引用次数: 17
Solving Real World MCM Design Problems 解决现实世界的MCM设计问题
Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753607
S. K. Ladd, J. Mandry
While design kits and autorouters are addressing an increasing paction of multichip module (MCW design challenges, the majority of MCM designs are time consuming, error prone, and therefore expensive. Current techniques for the physical design of multichip modules, even with the most advanced design automation tools, do not focus closely enough on the planning and preparation activities that preceed the actual physical design. Without buying new sojiware, engineers designing MCMs can optimize their current design tools to overcome these present-day problems. They must strictly manage component and manufacturing specijkations, automatically generate library parts from electronic, photographic, or faxed inputs), and automatically configure design software settings on a design-by-design basis.
虽然设计套件和自动路由器正在解决越来越多的多芯片模块(MCW)设计挑战,但大多数MCM设计都很耗时,容易出错,因此价格昂贵。目前的多芯片模块物理设计技术,即使使用最先进的设计自动化工具,也不能充分关注实际物理设计之前的计划和准备活动。无需购买新的sojiware,设计mcm的工程师可以优化他们当前的设计工具来克服这些当今的问题。他们必须严格管理组件和制造规范,从电子、照相或传真输入自动生成库部件),并在逐个设计的基础上自动配置设计软件设置。
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引用次数: 6
Cost Implications of Large Area MCM Processing 大面积MCM加工的成本影响
Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753532
D. Frye, M. Skinner, R. Heistand, P. Garrou, T. Tessier
The Envision/spl TM/ cost model has been extended to allow an economic evaluation of Large Area Processing (LAP) techniques to fabricate MCM D and LD substrates. The model is based on the unit operation analysis of the capital, material, utilities and workforce requirements per thin film layer (dielectric and conductor layer pair). Comparisons are readily made between sputtered and plated metallurgy with and without metal barrier layers; and between dry etchable, and photosensitive dielectrics. Sensitivity analysis has been performed on coating tool cost, throughput and efficiency of the coating process and the type of tools and materials used to generate vias. More than a threefold cost differential exists between sow of the manufacturing scenarios, and more than a ten fold cost differential exists between IC MCM based fabrication and LAP MCM fabrication. This model is applicable to LAP MCM-D, MCM-CD and MCM-LD manufacturing.
Envision/spl TM/成本模型已经扩展到允许对制造MCM D和LD基板的大面积加工(LAP)技术进行经济评估。该模型基于对每个薄膜层(介电层和导体层对)的资本、材料、公用事业和劳动力需求的单元运行分析。在有和没有金属阻挡层的溅射和电镀冶金之间很容易进行比较;又介于干式蚀刻、光敏电介质之间。对涂层刀具成本、涂层工艺的产量和效率以及用于生成过孔的工具和材料类型进行了敏感性分析。两种制造方案之间存在三倍以上的成本差异,基于IC MCM的制造和LAP MCM制造之间存在十倍以上的成本差异。该模型适用于LAP MCM-D, MCM-CD和MCM-LD制造。
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引用次数: 16
Fine Pitch Wedge Bonding for High Density Packaging 用于高密度封装的小间距楔焊
Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753528
R. Short
In today's computers, high pin count packages are required for the high performance, high density silicon being utilized. A significant challenge exists to provide such designs while maintaining a cost effective, high yielding assembly process. This paper discusses Unisys' experience in the development of fine pitch (100/spl mu/m) aluminum wedge bonding for a 591 Pin Grid Array package. Experience and available equipment dictated the package to be die attached using silver glass and wirebonded using 32/spl mu/m aluminum wire. Die attach was well within existing capabilities but the interconnect of over 550 wires on 100/spl mu/m pitch posed a significant challenge. Considerations were given to maximum wire to wire clearance, layer to layer misregistration, wire lengths, bonding tool angles, and fiducials that would provide maximum automatic alignment accuracy. Three dimensional CAD modeling of the bond head and package was followed with an Assembly Test Vehicle (ATV). The ATV was designed to match worst case geometries, and was used to verify concepts developed during 3D modeling. The product was introduced into production in 1993, and has exceeded predicted assembly yields. Although the fine pitch wire bonding was demonstrated on a single chip package, the technology is transportable to multichip applications.
在今天的计算机中,高引脚数封装需要高性能,高密度的硅被利用。在提供这种设计的同时保持成本效益和高产量的装配过程是一个重大挑战。本文讨论了Unisys在591引脚栅格阵列封装中开发细间距(100/spl mu/m)铝楔键合的经验。根据经验和现有设备,封装采用银玻璃模具连接,并使用32/spl μ m铝线进行线接。芯片连接在现有能力范围内,但在100/spl亩/米间距上连接550多根电线构成了重大挑战。考虑到最大线对线间隙、层对层错配、线长度、粘接工具角度和基准,以提供最大的自动对准精度。采用装配试验车(ATV)对粘结头和封装进行了三维CAD建模。ATV设计用于匹配最坏情况的几何形状,并用于验证3D建模过程中开发的概念。该产品于1993年投入生产,装配产量已超过预期。虽然在单芯片封装上演示了细间距线键合,但该技术可用于多芯片应用。
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引用次数: 2
The TCC/MCM: /spl mu/BGA on a laminated substrate 层压基板上的TCC/MCM: /spl mu/BGA
Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753545
M. Martínez, D. Gibson, L. Matthew, T. DiStefano, J. Cofield
One of the technical issues obstructing progress in MCMs is the lack of a cost-effective interconnect which is simultaneously small and testable. None of the standard interconnects - TAB, wirebond or C4 - meet both criteria, and bare die test approaches have significant drawbacks. In this paper, a complete MCM solution will be introduced which consists of a micro-BGA interconnect called the TCC (Tessera Compliant Chip) and a TLS (Tessera Laminated Substrate) substrate. The TCC combines aspects of wirebond, TAB and C4 to give a die-sized, testable package for KGD and MCMs. The TLS is fabricated with a parallel lamination process which allows for blind and buried vias, and high wireability. The /spl mu/BGA is attached to the substrate using conventional SMT assembly. Extensive use of the processes and infrastructure which already exist in the packaging industry make the TCC/MCM a logical extension of current technology and a low-cost alternative for high volume packaging applications. This presentation introduces Tessera's MCM solution, and describes a test-module designed to characterize the high-speed performance of the substrate and TCC. An 8-layer substrate (4S/4P) holding a 600 I/0 processor, two controllers and eight SRAMs is used to evaluate wire-length distribution and electrical performance. Simulations of signal integrity, cross-talk, simultaneous switching noise and interconnect delay will be presented. The performance of the TCC/TLS is compared to copper-polyimide MCM-D.
阻碍mcm进展的技术问题之一是缺乏成本效益高的同时又小又可测试的互连。没有一种标准互连——TAB、线键或C4——满足这两个标准,而且裸模测试方法有明显的缺点。本文将介绍一个完整的MCM解决方案,该解决方案由称为TCC (Tessera兼容芯片)的微bga互连和TLS (Tessera层压基板)基板组成。TCC结合了线键、TAB和C4的各个方面,为KGD和mcm提供了一个模具大小的可测试封装。TLS采用平行层压工艺制造,允许盲孔和埋孔,并且具有高连接性。使用传统的SMT组装将/spl mu/BGA连接到基板上。广泛使用包装行业中已经存在的工艺和基础设施,使TCC/MCM成为当前技术的逻辑延伸,也是大批量包装应用的低成本替代品。本报告介绍了Tessera的MCM解决方案,并描述了一个测试模块,用于表征基板和TCC的高速性能。一个8层基板(4S/4P)容纳一个600 I/0处理器,两个控制器和8个sram用于评估线长分布和电气性能。给出了信号完整性、串扰、同时开关噪声和互连延迟的仿真。将TCC/TLS的性能与铜聚酰亚胺MCM-D进行了比较。
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引用次数: 1
期刊
Proceedings of the International Conference on Multichip Modules
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