Counter-intuitive Ge/Si/O interactions and Ge/Si symbiosis enable the creatation of new classes of exciting nanoelectronic and nanophotonic devices

Abstract

We have successfully exploited multi-dimensional spaces of concentrations of the interstitial species, Si and Ge, geometries and compositions of the starting SiGe nano-pillar, and sources of Si interstitials (the Si3N4 and Si encapsulation layers) to create new classes of exciting optical and electronic devices such as single-electron tunneling devices, wavelength-tunable photodetectors, and MOSFETs.