A highly reliable sub-half-micron via and interconnect technology using Al alloy high-temperature sputter filling

1992 Symposium on VLSI Technology Digest of Technical Papers Pub Date : 1992-06-02 DOI:10.1109/VLSIT.1992.200651

H. Nishimura, T. Yamada, R. Sinclair, S. Ogawa

引用次数: 3

Abstract

A technology using Al-Si-Cu alloy high-temperature sputter filling and a thin Ti underlayer to prevent Si from precipitating is discussed. Complete filling of a 0.15- mu m-diameter via with aspect ratio of 4.5 has been achieved. The resistance of the 0.3- mu m sputter filled via was 0.71 Omega . This is about one order of magnitude lower than that for a conventional via. The electromigration resistance of the 0.3- mu m filled via was found to be four orders of magnitude greater than that of the conventional vias. Superior stress-induced migration resistance of 0.5- mu m wide lines was confirmed.<>

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

采用铝合金高温溅射填充的高可靠性亚半微米通孔和互连技术

讨论了用Al-Si-Cu合金高温溅射填充和薄钛衬底防止Si析出的技术。完成了直径为0.15 μ m，纵横比为4.5的孔道填充。填充孔的0.3 μ m溅射电阻为0.71 ω。这比传统的通孔要低一个数量级。发现0.3 μ m填充孔的电迁移电阻比常规孔高4个数量级。证实了0.5 μ m宽系具有较好的抗应力迁移能力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

1992 Symposium on VLSI Technology Digest of Technical Papers

自引率

0.00%

发文量

期刊最新文献

Repair technique for phase shifting masks using silicon-containing resist A Si bipolar transistor with f/sub max/ of 40 GHz and its application to a 35 GHz 1/16 dynamic frequency divider Trends in single-wafer processing Ultra-thin silicon dioxide leakage current and scaling limit Conductive channel in ONO formed by controlled dielectric breakdown