Liquid phase silylation of Shipley SPR500A-series resists using top surface imaging

The Fourth International Conference on Advanced Semiconductor Devices and Microsystem Pub Date : 2002-12-16 DOI:10.1109/ASDAM.2002.1088469

K. Arshak, M. Mihov, A. Arshak, D. McDonagh, D. Sutton, S. Newcomb

{"title":"Liquid phase silylation of Shipley SPR500A-series resists using top surface imaging","authors":"K. Arshak, M. Mihov, A. Arshak, D. McDonagh, D. Sutton, S. Newcomb","doi":"10.1109/ASDAM.2002.1088469","DOIUrl":null,"url":null,"abstract":"Top Surface Imaging (TSI) is a well established technique to improve resolution of optical lithography, deep UV (248 nm) lithography and 193 nm lithography. The Positive Resist Image by Dry Etching (PRIME) process is a high-resolution single layer lithography scheme incorporating electron-beam exposure, near UV exposure (365 nm), silylation and dry development. In this paper, the liquid-phase silylation process step in PRIME with Shipley SPR500A-series resists is experimentally, investigated, and a new efficient process has been developed The impact of different silylating agents is characterised using FT-IR spectroscopy SIM spectrometry and cross-sectional SEM and TEM. Liquid-phase silylated patterns of SPR505 and SPR510 resist are presented, indicating almost vertical silylation sidewall profiles and high-silylation contrast when using Hexamethylcyclotrisiloxane (HMCTS) silylating agents. Results show that in case of e-beam exposure, a dose of 50 C/cm/sup 2/ at 30 keV is efficient to crosslink the resist and prevent silylation.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"3018 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2002.1088469","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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Abstract

Top Surface Imaging (TSI) is a well established technique to improve resolution of optical lithography, deep UV (248 nm) lithography and 193 nm lithography. The Positive Resist Image by Dry Etching (PRIME) process is a high-resolution single layer lithography scheme incorporating electron-beam exposure, near UV exposure (365 nm), silylation and dry development. In this paper, the liquid-phase silylation process step in PRIME with Shipley SPR500A-series resists is experimentally, investigated, and a new efficient process has been developed The impact of different silylating agents is characterised using FT-IR spectroscopy SIM spectrometry and cross-sectional SEM and TEM. Liquid-phase silylated patterns of SPR505 and SPR510 resist are presented, indicating almost vertical silylation sidewall profiles and high-silylation contrast when using Hexamethylcyclotrisiloxane (HMCTS) silylating agents. Results show that in case of e-beam exposure, a dose of 50 C/cm/sup 2/ at 30 keV is efficient to crosslink the resist and prevent silylation.

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采用顶面成像的Shipley spr500a系列抗蚀剂液相硅基化

顶面成像(TSI)是一种成熟的提高光学光刻、深紫外(248 nm)光刻和193 nm光刻分辨率的技术。干法蚀刻正抗蚀成像(PRIME)工艺是一种高分辨率单层光刻方案，结合了电子束曝光、近紫外曝光(365 nm)、硅基化和干显影。本文对Shipley spr500a系列抗蚀剂在PRIME中的液相硅烷化过程进行了实验研究，开发了一种新的高效工艺，并利用FT-IR光谱、SIM光谱、SEM和TEM表征了不同硅烷化剂对PRIME的影响。SPR505和SPR510抗蚀剂的液相硅基化模式表明，当使用六甲基环三硅氧烷(HMCTS)硅基化剂时，它们的硅基化侧壁几乎是垂直的，硅基化程度很高。结果表明，在电子束照射下，50℃/cm/sup / / 30 keV的剂量可以有效地交联抗蚀剂，防止硅基化。

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The Fourth International Conference on Advanced Semiconductor Devices and Microsystem

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