Shengzhou Zhang, Qiliang Li, Weifeng Zhu, Wanshun Jiang, F. Nian, Jianqin Deng
{"title":"A compact full W-band monolithic low noise amplifier for millimeter-wave imaging","authors":"Shengzhou Zhang, Qiliang Li, Weifeng Zhu, Wanshun Jiang, F. Nian, Jianqin Deng","doi":"10.1109/CICTA.2018.8705714","DOIUrl":null,"url":null,"abstract":"This paper presents a compact full W-band microwave monolithic integrated circuit (MMIC) low noise amplifier (LNA) using commercially 100nm GaAs pHEMTs technology. With a chip area of 1.1 mm$^{2}$, the circuit consists of 4 stages $4\\times30\\mu$m gate width transistors. The main performances of the full W-band LNA can be summarized as following: the peak gain of 22dB with 3dB bandwidth of 28GHz from 75GHz to 103GHz, where gain is higher than 17dB within the full W-band. The circuit exhibits the noise figure less than 4.5dB on the entire 75GHz-110GHz range and the minimum of 3.5dB at 82GHz. The input and output return losses are better than 6dB and 9dB on the full W-band, respectively. In conclusion, the LNA predicts outstanding figure-of-merits.","PeriodicalId":186840,"journal":{"name":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICTA.2018.8705714","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents a compact full W-band microwave monolithic integrated circuit (MMIC) low noise amplifier (LNA) using commercially 100nm GaAs pHEMTs technology. With a chip area of 1.1 mm$^{2}$, the circuit consists of 4 stages $4\times30\mu$m gate width transistors. The main performances of the full W-band LNA can be summarized as following: the peak gain of 22dB with 3dB bandwidth of 28GHz from 75GHz to 103GHz, where gain is higher than 17dB within the full W-band. The circuit exhibits the noise figure less than 4.5dB on the entire 75GHz-110GHz range and the minimum of 3.5dB at 82GHz. The input and output return losses are better than 6dB and 9dB on the full W-band, respectively. In conclusion, the LNA predicts outstanding figure-of-merits.
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