{"title":"ESD Diode Devices Simulation and Analysis in a FinFET Technology","authors":"Yunhao Li, Yize Wang, Yuan Wang","doi":"10.23919/IEDS48938.2021.9468834","DOIUrl":null,"url":null,"abstract":"As CMOS scales down to FinFET technology, the performance of ESD devices degenerates seriously. In this work, two types of ESD protection diodes, Gated Diode and STI Diode, are investigatedin 14nm FinFET technology. The corresponding 3D TCAD simulation helps to understand the working mechanism for the above two diodes.","PeriodicalId":174954,"journal":{"name":"2020 International EOS/ESD Symposium on Design and System (IEDS)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International EOS/ESD Symposium on Design and System (IEDS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/IEDS48938.2021.9468834","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
As CMOS scales down to FinFET technology, the performance of ESD devices degenerates seriously. In this work, two types of ESD protection diodes, Gated Diode and STI Diode, are investigatedin 14nm FinFET technology. The corresponding 3D TCAD simulation helps to understand the working mechanism for the above two diodes.
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