Resonant tunnelling diodes for digital circuit applications

Abstract

The application of quantum tunnelling devices namely resonant tunnelling diodes for high-performance digital circuitry is presented. The reliability of devices based on III/V semiconductor heterostructures is demonstrated and the applicability of emerging Si/SiGe heterostructures is discussed. The potential breakthrough of this approach is attributed to a very successful implementation in advanced circuit architectures. The applicability of Linear Threshold Gate logic based on the monostable-bistable transition logic element (MOBILE) is discussed here as the presently most promising candidate.