{"title":"Influence of oxidation conditions on electrical properties of ultra-thin SiO2layers","authors":"J. Ruzyllo","doi":"10.1109/IEDM.1977.189193","DOIUrl":null,"url":null,"abstract":"The influence of thermal growth conditions on the electrical properties of ultra-thin tunnable silicon dioxide layers on silicon substrate are studied by three independent measuring techniques. It is shown that these properties change considerably with the change in oxidation conditions /temperature, content of water in oxidizing ambient/, although the layers obtained under the different conditions might be of the same thickness. It is proved that in the case of layers discussed in this work only the dry oxidation at the temperature higher than 800°C gives the Si-SiO2structures with sufficiently low densitles of interface and oxide surface charge.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1977 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1977.189193","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
The influence of thermal growth conditions on the electrical properties of ultra-thin tunnable silicon dioxide layers on silicon substrate are studied by three independent measuring techniques. It is shown that these properties change considerably with the change in oxidation conditions /temperature, content of water in oxidizing ambient/, although the layers obtained under the different conditions might be of the same thickness. It is proved that in the case of layers discussed in this work only the dry oxidation at the temperature higher than 800°C gives the Si-SiO2structures with sufficiently low densitles of interface and oxide surface charge.
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