Gunn effect high-speed carry finding device for 8-bit binary adder

Abstract

A new type of Gunn effect gate device was reported by us earlier and demonstrated in the form of a 4 bit gate device(1). The 4 bit gate device consisted of four cascaded inhibitors, each inhibitor being an integration of a Schottky electrode-triggered Gunn device and a m.e.s.f.e.t. The device had the high-speed property of the Gunn device and the stability of operation inherent to the m.e.s.f.e.t. operated in an on-off mode. This paper reports the application of such inhibitors to a high-speed carry finding device. The inhibitors have been improved in construction and operation in many ways. The most important improvement is the attachment of a memory function to the inhibitor whereby the output signal is held for any long time desired even the input signal comes in the form of a pulse of short duration. The memory makes use of the accumulation of excess electrons on the Schottky trigger electrode. Such an arrangement has also brought a remarkable improvement in the anode voltage margin.