This paper deals with the development of a new technology of forming an oxide film on GaAs. It can be used for surface passivation of GaAs or other compound semiconductor devices, for gate insulation of GaAs MISFETs and also for isolation in GaAs IC. A low temperature of below 300°C is required to prevent the evaporation of As during oxidation. This process utilizes the anodic oxidation of GaAs in oxygen plasma, which is a dry process and a process of oxidation in oxygen plasma combined with anodic oxidation. The GaAs chip is placed outside the plasma generating region in order to keep the chip temperature below 300°C and is biased at 10-100V positive with respect to the plasma. Data will be presented on the thickness of grown oxide and the terminal voltage between the anode (GaAs substrate) and the cathode as a function of the oxidation time. It should be pointed out that the oxide with 2000Å in thickness can be grown for 5 minutes even at 80°C. Auger electron spectroscopy revealed the oxide composition as GaAsOxwhose x is less than 4 and the oxide has high electrical resistivity. The capacitance voltage characteristics of an MOS diode have been determined. The authors have succeeded in oxidizing GaAs at room temperature with anodic oxidation in oxygen plasma and obtaining oxide films with good electrical characteristic and with uniform thickness.
{"title":"Anodic oxidation of GaAs in oxygen plasma","authors":"T. Sugano, K. Yamasaki","doi":"10.7567/SSDM.1977.B-6-1","DOIUrl":"https://doi.org/10.7567/SSDM.1977.B-6-1","url":null,"abstract":"This paper deals with the development of a new technology of forming an oxide film on GaAs. It can be used for surface passivation of GaAs or other compound semiconductor devices, for gate insulation of GaAs MISFETs and also for isolation in GaAs IC. A low temperature of below 300°C is required to prevent the evaporation of As during oxidation. This process utilizes the anodic oxidation of GaAs in oxygen plasma, which is a dry process and a process of oxidation in oxygen plasma combined with anodic oxidation. The GaAs chip is placed outside the plasma generating region in order to keep the chip temperature below 300°C and is biased at 10-100V positive with respect to the plasma. Data will be presented on the thickness of grown oxide and the terminal voltage between the anode (GaAs substrate) and the cathode as a function of the oxidation time. It should be pointed out that the oxide with 2000Å in thickness can be grown for 5 minutes even at 80°C. Auger electron spectroscopy revealed the oxide composition as GaAsOxwhose x is less than 4 and the oxide has high electrical resistivity. The capacitance voltage characteristics of an MOS diode have been determined. The authors have succeeded in oxidizing GaAs at room temperature with anodic oxidation in oxygen plasma and obtaining oxide films with good electrical characteristic and with uniform thickness.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115660889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-11-01DOI: 10.1109/IEDM.1977.189138
J. Osepchuk
The history of microwave tubes is reviewed from a philosophical viewpoint. An interesting part of this historical assessment is an examination of roles of technical forecasting and management planning. The definition of the microwave frequency range is presented and shown to support the primacy of tubes, or electron-beam devices, in a frequency range between those dominated by discrete solid-state devices and lasers. A generalized device theory is shown to be useful in assessing limitations and potentials. The magnetron has a unique place as the microwave component of by-far greatest production volume associated with microwave-oven boom. New elements in the long-range future of microwave tubes include expanding power applications, cross-fertilization with other device disciplines, the controversial millimeter-wave potential, and increasing attention to the potential for RFI and radiation hazards. If history is any guide, we can expect some further surprises in this field.
{"title":"Life begins at forty: Microwave tubes","authors":"J. Osepchuk","doi":"10.1109/IEDM.1977.189138","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189138","url":null,"abstract":"The history of microwave tubes is reviewed from a philosophical viewpoint. An interesting part of this historical assessment is an examination of roles of technical forecasting and management planning. The definition of the microwave frequency range is presented and shown to support the primacy of tubes, or electron-beam devices, in a frequency range between those dominated by discrete solid-state devices and lasers. A generalized device theory is shown to be useful in assessing limitations and potentials. The magnetron has a unique place as the microwave component of by-far greatest production volume associated with microwave-oven boom. New elements in the long-range future of microwave tubes include expanding power applications, cross-fertilization with other device disciplines, the controversial millimeter-wave potential, and increasing attention to the potential for RFI and radiation hazards. If history is any guide, we can expect some further surprises in this field.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133031360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A development program is currently being undertaken to produce photon-counting detector arrays which are suitable for use in both ground-based and space-borne instruments and which utilize the full sensitivity, dynamic range and photometric stability of the microchannel array plate (MCP). The construction of the detector arrays and the status of the development program are briefly described.
{"title":"Multi-anode microchannel arrays","authors":"J. Timothy, R. L. Bybee","doi":"10.1117/12.955637","DOIUrl":"https://doi.org/10.1117/12.955637","url":null,"abstract":"A development program is currently being undertaken to produce photon-counting detector arrays which are suitable for use in both ground-based and space-borne instruments and which utilize the full sensitivity, dynamic range and photometric stability of the microchannel array plate (MCP). The construction of the detector arrays and the status of the development program are briefly described.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127888878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
N. Hashizume, M. Kawashima, K. Tomizawa, M. Morisue, S. Kataoka
A new type of Gunn effect gate device was reported by us earlier and demonstrated in the form of a 4 bit gate device(1). The 4 bit gate device consisted of four cascaded inhibitors, each inhibitor being an integration of a Schottky electrode-triggered Gunn device and a m.e.s.f.e.t. The device had the high-speed property of the Gunn device and the stability of operation inherent to the m.e.s.f.e.t. operated in an on-off mode. This paper reports the application of such inhibitors to a high-speed carry finding device. The inhibitors have been improved in construction and operation in many ways. The most important improvement is the attachment of a memory function to the inhibitor whereby the output signal is held for any long time desired even the input signal comes in the form of a pulse of short duration. The memory makes use of the accumulation of excess electrons on the Schottky trigger electrode. Such an arrangement has also brought a remarkable improvement in the anode voltage margin.
{"title":"Gunn effect high-speed carry finding device for 8-bit binary adder","authors":"N. Hashizume, M. Kawashima, K. Tomizawa, M. Morisue, S. Kataoka","doi":"10.1049/EL:19770455","DOIUrl":"https://doi.org/10.1049/EL:19770455","url":null,"abstract":"A new type of Gunn effect gate device was reported by us earlier and demonstrated in the form of a 4 bit gate device(1). The 4 bit gate device consisted of four cascaded inhibitors, each inhibitor being an integration of a Schottky electrode-triggered Gunn device and a m.e.s.f.e.t. The device had the high-speed property of the Gunn device and the stability of operation inherent to the m.e.s.f.e.t. operated in an on-off mode. This paper reports the application of such inhibitors to a high-speed carry finding device. The inhibitors have been improved in construction and operation in many ways. The most important improvement is the attachment of a memory function to the inhibitor whereby the output signal is held for any long time desired even the input signal comes in the form of a pulse of short duration. The memory makes use of the accumulation of excess electrons on the Schottky trigger electrode. Such an arrangement has also brought a remarkable improvement in the anode voltage margin.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131731894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A study of a new type of varactor diode which consists of a semiconductor multilayer structure is reported. This varactor diode has much stronger nonlinearity in capacitance variation with applied bias voltage than does the conventional varactor due to the two-dimensional expansion of the depletion region. First, the internal behaviors of this diode are investigated in detail by two-dimensional computer simulation. With the aid of those results, an approximate analytical expression for the voltage dependence of capacitance is derived for the purpose of practical design. Then experimental studies have been performed using Si, which substantiate the theoretical predictions.
{"title":"New type of varactor diode having strongly nonlinear C-V characteristics","authors":"S. Kaneda, S. Shirota","doi":"10.1049/EL:19770262","DOIUrl":"https://doi.org/10.1049/EL:19770262","url":null,"abstract":"A study of a new type of varactor diode which consists of a semiconductor multilayer structure is reported. This varactor diode has much stronger nonlinearity in capacitance variation with applied bias voltage than does the conventional varactor due to the two-dimensional expansion of the depletion region. First, the internal behaviors of this diode are investigated in detail by two-dimensional computer simulation. With the aid of those results, an approximate analytical expression for the voltage dependence of capacitance is derived for the purpose of practical design. Then experimental studies have been performed using Si, which substantiate the theoretical predictions.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123815585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189181
G. Fleury, J. Kuntzmann, P. Lafuma
Described is a new class of high-power traveling-wave tubes (TWT's) for telecommunications transmitters, which employ an advanced helix technology to enable operation at higher output-power levels than would be possible with the "conventional" helix technology. The helix technology used to make these tubes includes a copper helix, which is brazed to beryllium-oxide dielectric support rods, themselves being brazed to an outer copper sleeve. The resulting structure is characterized by low thermal contact resistance, superior heat-dissipation capacity and low RF losses. Experimental results presented show the advantages of this technology as compared to the earlier one. The output-power limits of brazed-helix TWT's are also estimated. Finally, the main brazed-helix telecommunications TWT's manufactured by THOMSON-CSF are described briefly, to give an idea of the performances that can be achieved with this advanced technology.
{"title":"High-power brazed-helix telecommunications TWT's","authors":"G. Fleury, J. Kuntzmann, P. Lafuma","doi":"10.1109/IEDM.1977.189181","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189181","url":null,"abstract":"Described is a new class of high-power traveling-wave tubes (TWT's) for telecommunications transmitters, which employ an advanced helix technology to enable operation at higher output-power levels than would be possible with the \"conventional\" helix technology. The helix technology used to make these tubes includes a copper helix, which is brazed to beryllium-oxide dielectric support rods, themselves being brazed to an outer copper sleeve. The resulting structure is characterized by low thermal contact resistance, superior heat-dissipation capacity and low RF losses. Experimental results presented show the advantages of this technology as compared to the earlier one. The output-power limits of brazed-helix TWT's are also estimated. Finally, the main brazed-helix telecommunications TWT's manufactured by THOMSON-CSF are described briefly, to give an idea of the performances that can be achieved with this advanced technology.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115117526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189284
T. Wessel-Berg
The paper describes an improved model of helix TWT's with circuit and beam separated in the radial direction, corresponding better to the actual physical configuration of TWT's. The effect of separation of beam and circuit is in the appearance of beam loading effects of the circuit and field loading effects of the beam, both of which are unaccounted for in the usual TWT model where circuit and beam are treated as being at the same radial position. In the TWT theory of the improved model both loading effects turn out to be purely reactive, introducing no loss but an apparent increase in the forward circuit wave and an apparent decrease of the dc beam velocity. This can be interpreted as a desynchronization effect which must be offset by increasing the beam voltage. For typical TWT parameters the required increase in beam voltage is between one and four percent.
{"title":"Beam loading in traveling wave tubes","authors":"T. Wessel-Berg","doi":"10.1109/IEDM.1977.189284","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189284","url":null,"abstract":"The paper describes an improved model of helix TWT's with circuit and beam separated in the radial direction, corresponding better to the actual physical configuration of TWT's. The effect of separation of beam and circuit is in the appearance of beam loading effects of the circuit and field loading effects of the beam, both of which are unaccounted for in the usual TWT model where circuit and beam are treated as being at the same radial position. In the TWT theory of the improved model both loading effects turn out to be purely reactive, introducing no loss but an apparent increase in the forward circuit wave and an apparent decrease of the dc beam velocity. This can be interpreted as a desynchronization effect which must be offset by increasing the beam voltage. For typical TWT parameters the required increase in beam voltage is between one and four percent.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"171 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115288946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189310
D. C. Mayer, N. A. Masnari, R. Lomax
A technique has been devised for fabricating short-channel (<0.5 µm) vertical JFET structures in Si using conventional contact photolithographic techniques. The process utilizes an anisotropic etch followed by a diffusion to form the FET channel. This technique permits fabrication of high-mobility, short-channel devices with low parasitic source resistances. A finite-element numerical simulation of this structure revealed pentode-like common-source output characteristics with moderate transconductance and high saturated output conductance. Deviations of device behavior from that of conventional JFET structures were attributed to depletion spreading in the gate and to carrier accumulation in the channel. Fabrication of the vertical JFET revealed good agreement between observed and predicted behavior. Channel lengths of fabricated JFETs were measured between 0.3 µm and 0.6 µm. FETs with triode-like output characteristics as well as conventional BJTs were fabricated in the same processing sequence simply by incorporating different width source-etch windows in the design.
{"title":"A submicron-channel vertical junction field-effect transistor","authors":"D. C. Mayer, N. A. Masnari, R. Lomax","doi":"10.1109/IEDM.1977.189310","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189310","url":null,"abstract":"A technique has been devised for fabricating short-channel (<0.5 µm) vertical JFET structures in Si using conventional contact photolithographic techniques. The process utilizes an anisotropic etch followed by a diffusion to form the FET channel. This technique permits fabrication of high-mobility, short-channel devices with low parasitic source resistances. A finite-element numerical simulation of this structure revealed pentode-like common-source output characteristics with moderate transconductance and high saturated output conductance. Deviations of device behavior from that of conventional JFET structures were attributed to depletion spreading in the gate and to carrier accumulation in the channel. Fabrication of the vertical JFET revealed good agreement between observed and predicted behavior. Channel lengths of fabricated JFETs were measured between 0.3 µm and 0.6 µm. FETs with triode-like output characteristics as well as conventional BJTs were fabricated in the same processing sequence simply by incorporating different width source-etch windows in the design.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116982071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189161
K. Ng, H. Card
The purpose of this work is to understand an important degradation mechanism in Schottky barrier photodetectors and solar cells. The I-V characteristics of Au-nSi devices under illumination show a pronounced photocurrent suppression at low voltages in the presence of an interfacial oxide layer of thickness ≥ 20 A (intentionally introduced) but no suppression in the case of a carefully prepared near-intimate contact. The analysis of these devices takes into account the exchange of charge carriers between interface states and the metal (by tunneling) and between these states and the conduction and valence bands in the semiconductor. As suggested by the experiments, this shows that recombination in the interface states can be important only in the presence of a significant interfacial layer.
{"title":"Photocurrent suppression and interface state recombination in MIS-Schottky barriers","authors":"K. Ng, H. Card","doi":"10.1109/IEDM.1977.189161","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189161","url":null,"abstract":"The purpose of this work is to understand an important degradation mechanism in Schottky barrier photodetectors and solar cells. The I-V characteristics of Au-nSi devices under illumination show a pronounced photocurrent suppression at low voltages in the presence of an interfacial oxide layer of thickness ≥ 20 A (intentionally introduced) but no suppression in the case of a carefully prepared near-intimate contact. The analysis of these devices takes into account the exchange of charge carriers between interface states and the metal (by tunneling) and between these states and the conduction and valence bands in the semiconductor. As suggested by the experiments, this shows that recombination in the interface states can be important only in the presence of a significant interfacial layer.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125411642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189322
S. Hersee
The degradation of high radiance LEDs has been characterised over a range of operating temperatures. It is shown that the decay is due to two independant mechanisms. The first mechanism relies on the movement of a charged species in the vicinity of the junction region. The second involves the breakdown of the p-side contact, followed by the diffusion of gold to the active region. The latter mechanism is expected to limit the device lifetime to approximately 106hours. An improved p-side metallisation is discussed.
{"title":"Long lived high radiance LEDs for fibre optic communications systems","authors":"S. Hersee","doi":"10.1109/IEDM.1977.189322","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189322","url":null,"abstract":"The degradation of high radiance LEDs has been characterised over a range of operating temperatures. It is shown that the decay is due to two independant mechanisms. The first mechanism relies on the movement of a charged species in the vicinity of the junction region. The second involves the breakdown of the p-side contact, followed by the diffusion of gold to the active region. The latter mechanism is expected to limit the device lifetime to approximately 106hours. An improved p-side metallisation is discussed.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125509517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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