Verilog-A modeling of filamentary-based complementary resistance switching devices

Abstract

This paper presents a compact model implemented in Verilog-A for complementary resistive switching (CRS) devices based on nickel oxide (NiO). Device characterization enabled the creation and enhancement of the model for the complementary resistive switching RRAM including temperature dependence which is implemented in Verilog- A and could be used in circuit simulators for design of RRAM memory circuits.