H. Numata, N. Banno, K. Okamoto, N. Iguchi, H. Hada, M. Hashimoto, T. Sugibayashi, T. Sakamoto, M. Tada
{"title":"Characterization of Chalcogenide Selectors for Crossbar Switch Used in Nonvolatile FPGA","authors":"H. Numata, N. Banno, K. Okamoto, N. Iguchi, H. Hada, M. Hashimoto, T. Sugibayashi, T. Sakamoto, M. Tada","doi":"10.23919/SNW.2019.8782960","DOIUrl":null,"url":null,"abstract":"Sputter deposited Ge<inf>x</inf>Se<inf>1−x</inf> films are characterized, prior to device fabrication for a selector. A Se-rich film has GeSe<inf>4/2</inf> tetrahedral structure and higher crystallization temperature than Ge-rich films. Printed Ag-paste electrodes are used for I-V measurement and an amorphous Se-rich Ge<inf>x</inf>Se<inf>1−x</inf> film shows the good switching property for the selector with an on/off ratio of 4.8 × 10<sup>4</sup>.","PeriodicalId":170513,"journal":{"name":"2019 Silicon Nanoelectronics Workshop (SNW)","volume":"104 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2019.8782960","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Sputter deposited GexSe1−x films are characterized, prior to device fabrication for a selector. A Se-rich film has GeSe4/2 tetrahedral structure and higher crystallization temperature than Ge-rich films. Printed Ag-paste electrodes are used for I-V measurement and an amorphous Se-rich GexSe1−x film shows the good switching property for the selector with an on/off ratio of 4.8 × 104.
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