Yasin Khatami, M. Krall, Hong Li, Chuan Xu, K. Banerjee
{"title":"Graphene based heterostructure tunnel-FETs for low-voltage/high-performance ICs","authors":"Yasin Khatami, M. Krall, Hong Li, Chuan Xu, K. Banerjee","doi":"10.1109/DRC.2010.5551939","DOIUrl":null,"url":null,"abstract":"The characteristics of the wide-narrow GNR T-FET were studied. The proposed device utilizes the small bandgap of wide-GNR to achieve high I<inf>ON</inf> and the high bandgap of narrow-GNR to attain low I<inf>OFF</inf>. The design space for the bandgap/width of the two regions was studied. The design parameters can be optimized to achieve I<inf>ON</inf> as high as 1.3 mA/µm, I<inf>ON</inf>/I<inf>OFF</inf> ratio as high as 10<sup>9</sup>, and S as small as 10 mV/dec at V<inf>DD</inf>=0.5 V. Compared to the HP MOSFET with L<inf>g</inf>=25 nm [6], the wide-narrow GNR T-FET exhibits 2X and 10<sup>4</sup>X improvement in I<inf>ON</inf> and I<inf>ON</inf>/I<inf>OFF</inf> ratio at V<inf>DD</inf>=0.5 V, which makes it suitable for HP/LP applications.","PeriodicalId":396875,"journal":{"name":"68th Device Research Conference","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"68th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2010.5551939","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
The characteristics of the wide-narrow GNR T-FET were studied. The proposed device utilizes the small bandgap of wide-GNR to achieve high ION and the high bandgap of narrow-GNR to attain low IOFF. The design space for the bandgap/width of the two regions was studied. The design parameters can be optimized to achieve ION as high as 1.3 mA/µm, ION/IOFF ratio as high as 109, and S as small as 10 mV/dec at VDD=0.5 V. Compared to the HP MOSFET with Lg=25 nm [6], the wide-narrow GNR T-FET exhibits 2X and 104X improvement in ION and ION/IOFF ratio at VDD=0.5 V, which makes it suitable for HP/LP applications.
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