Takumi Yoshida, M. Yukinari, Takaaki Kaneko, N. Nishiyama, S. Arai
{"title":"Lasing characteristics of 1.3-μm npn-AlGaInAs/InP transistor laser — Dependence of the base layer structure","authors":"Takumi Yoshida, M. Yukinari, Takaaki Kaneko, N. Nishiyama, S. Arai","doi":"10.1109/ICIPRM.2014.6880520","DOIUrl":null,"url":null,"abstract":"Lasing characteristics of 1.3-μm npn-AlGaInAs/InP transistor laser (TL) depend on base layer structure were investigated through simulation and fabrication. As a result, while the TL has the same current gain, better lasing characteristics were observed for thinner thickness and wider bandgap.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2014.6880520","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Lasing characteristics of 1.3-μm npn-AlGaInAs/InP transistor laser (TL) depend on base layer structure were investigated through simulation and fabrication. As a result, while the TL has the same current gain, better lasing characteristics were observed for thinner thickness and wider bandgap.
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