Vertical Nanowire Tunneling Field-Effect Transistors adopting Core-shell Structure with Strain Effects

Abstract

Tunneling field-effect transistor (TFET) is one of the promising candidates to substitute conventional MOSFET for ultra-low power applications. TFETs obey band-to-band tunneling, thus attaining sub-60-mV/dec of the subthreshold swing. However, there is a trade-off of small on-state currents even at high operation voltage. In this work, the SiGe core-shell nanowire TFETs are introduced by showing superior DC characteristics compared to other silicon-based TFETs.