Experimental comparative study between the diamond MOSFET and its conventional counterpart in high temperatures environment

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2013-10-01 DOI:10.1109/S3S.2013.6716568

E. Galembeck, C. Renaux, D. Flandre, S. Gimenez

引用次数: 8

Abstract

An experimental comparative study of the high temperature effects between the diamond SOI MOSFET (DSM) and conventional SOI MOSFET (CSM) counterparts is performed. The Diamond layout style has demonstrated better electrical performance in high temperatures environment, mainly for high-frequency analog IC applications, regarding the same gate area, aspect ratio and bias conditions. This can be justified due to the longitudinal corner effect (LCE) and PAMDLE (parallel association of MOSFETS with different channel lengths) effects remain active in the diamond layout style at high temperature.

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高温环境下金刚石MOSFET与常规MOSFET的实验比较研究

对金刚石SOI MOSFET (DSM)和传统SOI MOSFET (CSM)的高温效应进行了实验对比研究。在相同的栅极面积、宽高比和偏置条件下，金刚石布局风格在高温环境下表现出更好的电气性能，主要用于高频模拟IC应用。由于纵向角效应(LCE)和PAMDLE(具有不同沟道长度的mosfet的平行关联)效应在高温下在金刚石布局风格中保持活跃，因此可以证明这是合理的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

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