Multiband Phase Space Operator for Narrow Bandgap Semiconductor Devices

L. Schulz, D. Schulz
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Abstract

The analysis of the charge carrier transport within modern device concepts of nanoelectronics and nanophotonics as well as THz technology requires the inclusion of multiband Hamiltonians. These can then be used to consider not only intraband transitions but also interband transitions as well as effects based on the existence and interaction of light and heavy holes. For this purpose appropriate multiband Hamiltonians must be applied for a suitable numerical analysis. On the basis of the quantum Liouville equation, a formalism is derived how multiband Hamiltonians can be integrated into advanced and recently developed Wigner transport based algorithms utilizing a phase space operator and which multiband models are appropriate. The presented formalism is demonstrated by its application onto resonant tunnel diodes that take advantage of interband effects within narrow band gap semiconductor devices.
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窄带隙半导体器件的多频带相空间算子
在纳米电子学和纳米光子学以及太赫兹技术的现代器件概念中,电荷载流子输运的分析需要包含多波段哈密顿量。然后,这些不仅可以用于考虑带内跃迁,还可以用于考虑带间跃迁以及基于轻、重空穴存在和相互作用的效应。为此,必须采用适当的多波段哈密顿量进行适当的数值分析。在量子Liouville方程的基础上,推导了如何利用相空间算子将多波段哈密顿量集成到先进的和最近开发的基于Wigner输运的算法中,以及哪些多波段模型是合适的。通过在利用窄带隙半导体器件带间效应的谐振隧道二极管上的应用,证明了所提出的形式。
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