S. Bellone, F. D. Della Corte, L. Di Benedetto, Loredana Freda Albanese, G. Licciardo
{"title":"A self-consistent model of the static and switching behaviour of 4H-SiC diodes","authors":"S. Bellone, F. D. Della Corte, L. Di Benedetto, Loredana Freda Albanese, G. Licciardo","doi":"10.1109/SMICND.2010.5650594","DOIUrl":null,"url":null,"abstract":"A novel model which is capable of describing with significant accuracy the temporal-spatial distributions of the minority carriers in 4H-SiC p-i-n diodes is presented. The analytical behaviour of the current, voltage and carrier distributions is compared with numerical simulations and with experimental results.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"CAS 2010 Proceedings (International Semiconductor Conference)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2010.5650594","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
A novel model which is capable of describing with significant accuracy the temporal-spatial distributions of the minority carriers in 4H-SiC p-i-n diodes is presented. The analytical behaviour of the current, voltage and carrier distributions is compared with numerical simulations and with experimental results.
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