{"title":"MOCVD-grown 175 GHz InP-GaAs/sub x/Sb/sub 1-x/-InP DHBTs with high current gains using strained and heavily C-doped base layers","authors":"M. Dvorak, N. Matine, S. Watkins, C. Bolognesi","doi":"10.1109/DRC.2000.877124","DOIUrl":null,"url":null,"abstract":"Summary form only given. In this paper, we report high current gain InP-GaAsSb-InP DHBTs implemented with a 200 /spl Aring/ thick strained GaAs/sub 0.6/Sb/sub 0.4/ highly-doped base layer (C: 8/spl times/10/sup 19/ cm/sup -3/). The devices exhibit peak cut-off frequencies f/sub T/= 175 GHz and f/sub max/=106 GHz with a BV/sub CEO/=6 V and a DC current gain /spl beta/=200-300 which can be traded off for higher f/sub max/ values. The devices behave extremely well even at low supply voltages: f/sub T/ remains above 150 GHz (125 GHz) for V/sub CE+/=0.75 V (0.55 V). This work is the first demonstration of a sub-picosecond transit time for an HBT with a base material other than GaInAs or GaAs, and we attribute the tenfold increase in /spl beta/ with respect to our previous work (Bolognesi et al, 1999) on the use of a strained As-rich base layer.","PeriodicalId":126654,"journal":{"name":"58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2000.877124","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Summary form only given. In this paper, we report high current gain InP-GaAsSb-InP DHBTs implemented with a 200 /spl Aring/ thick strained GaAs/sub 0.6/Sb/sub 0.4/ highly-doped base layer (C: 8/spl times/10/sup 19/ cm/sup -3/). The devices exhibit peak cut-off frequencies f/sub T/= 175 GHz and f/sub max/=106 GHz with a BV/sub CEO/=6 V and a DC current gain /spl beta/=200-300 which can be traded off for higher f/sub max/ values. The devices behave extremely well even at low supply voltages: f/sub T/ remains above 150 GHz (125 GHz) for V/sub CE+/=0.75 V (0.55 V). This work is the first demonstration of a sub-picosecond transit time for an HBT with a base material other than GaInAs or GaAs, and we attribute the tenfold increase in /spl beta/ with respect to our previous work (Bolognesi et al, 1999) on the use of a strained As-rich base layer.
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