Thin body GaSb-OI P-mosfets on Si wafers fabricated by direct wafer bonding

Abstract

We have demonstrated the operation of thin body GaSb-on-insulator (GaSb-OI) p-MOSFETs on Si wafers fabricated by direct wafer boding (DWB). We have developed a wafer-scale transfer technique for transferring ultrathin GaSb layers to Si wafers. We have found that the hole mobility of the thin body GaSb-OI p-MOSFETs depends on the GaSb thickness and the GaSb channel surface condition.