T. Hiramoto, G. Tsutsui, M. Saitoh, T. Nagumo, T. Saraya
{"title":"Mobility enhancement in (110)-oriented ultra-thin-body single-gate and double-gate SOI MOSFETs","authors":"T. Hiramoto, G. Tsutsui, M. Saitoh, T. Nagumo, T. Saraya","doi":"10.1109/IWNC.2006.4570977","DOIUrl":null,"url":null,"abstract":"Mobility enhancement of both electron and hole is experimentally demonstrated in (110) ultra-thin-body SOI MOSFETs. Single-gate operation and double-gate operation are also compared. Hole mobility enhancement in the single-gate operation is achieved by the suppression of phonon scattering, while electron mobility enhancement in double-gate operation is achieved by volume inversion. Based on the experimental results, the best device structure for highest CMOS circuit performance in future has been discussed.","PeriodicalId":356139,"journal":{"name":"2006 International Workshop on Nano CMOS","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Workshop on Nano CMOS","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWNC.2006.4570977","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Mobility enhancement of both electron and hole is experimentally demonstrated in (110) ultra-thin-body SOI MOSFETs. Single-gate operation and double-gate operation are also compared. Hole mobility enhancement in the single-gate operation is achieved by the suppression of phonon scattering, while electron mobility enhancement in double-gate operation is achieved by volume inversion. Based on the experimental results, the best device structure for highest CMOS circuit performance in future has been discussed.
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