A 1 V CMOS PLL designed in high-leakage CMOS process operating at 10-700 MHz

R. Holzer
{"title":"A 1 V CMOS PLL designed in high-leakage CMOS process operating at 10-700 MHz","authors":"R. Holzer","doi":"10.1109/ISSCC.2002.992223","DOIUrl":null,"url":null,"abstract":"A PLL is fabricated in a 0.13 /spl mu/m logic process where leakage currents are high. The loop capacitor is implemented by a structure of poly and 9 metal layers. The VCO is implemented with common-mode feedback to compensate for leakage currents. Maximum VCO frequency is 1400 MHz. Typical power is 7 mW at 200 MHz. RMS jitter is 25.4 ps at 360 MHz.","PeriodicalId":423674,"journal":{"name":"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"29","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2002.992223","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 29

Abstract

A PLL is fabricated in a 0.13 /spl mu/m logic process where leakage currents are high. The loop capacitor is implemented by a structure of poly and 9 metal layers. The VCO is implemented with common-mode feedback to compensate for leakage currents. Maximum VCO frequency is 1400 MHz. Typical power is 7 mW at 200 MHz. RMS jitter is 25.4 ps at 360 MHz.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
采用高漏电CMOS工艺设计的1 V锁相环,工作频率为10-700 MHz
锁相环以0.13 /spl mu/m的逻辑工艺制作,漏电流高。环路电容器由聚层和9层金属层结构实现。该压控振荡器采用共模反馈来补偿泄漏电流。最大压控振荡器频率为1400mhz。在200mhz时,典型功率为7mw。在360兆赫时,RMS抖动为25.4 ps。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Implementation of a third-generation 1.1GHz 64b microprocessor A 0.9 V to 1.95 V dynamic voltage-scalable and frequency-scalable 32 b PowerPC processor A highly-integrated tri-band/quad-mode SiGe BiCMOS RF-to-baseband receiver for wireless CDMA/WCDMA/AMPS applications with GPS capability A low-power RISC microprocessor using dual PLLs in a 0.13 /spl mu/m SOI technology with copper interconnect and low-k BEOL dielectric A 27 mW GPS radio in 0.35 /spl mu/m CMOS
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1