S. Palo, A. K. Panda, T. Sahu, N. Sahoo, T. C. Tripathy
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引用次数: 0
Abstract
In the present work, modulation of low temperature mobility $\mathbf{\mu}$ is studied theoretically with the application of electric field $\pmb{F}_{\pmb{e}}$ in a double quantum well HEMT structure whose channel is craved from $\pmb{Al}_{x}\pmb{Ga}_{\mathit{1}-x}\pmb{As}$ having V-shaped potential. We show that there is an unusual rise in $\pmb{\mu}$ at the transition field where the change in subband occupancy occurs, unlike that of the conventional square quantum well systems.
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