Investigation of SiO2 on AlGaAs prepared by liquid phase deposition

Abstract

The liquid phase deposition (LPD) was used to deposit silicon oxide (SiO2) layer on AlGaAs near room temperature. The LPD method is not only simple but also can obtain the SiO2 very economically. Both the aqueous solution of hydro-fluosilicic acid (H2SiF6) and boric acid (H3BO3) were used for the LPD solution. After rapid temperature annealing (RTA) at 300°C for 1 min, the leakage current density is ~ 4.24 × 10⁻⁷ A/cm² at 1 MV/cm, and the interface trap density is ~ 1.7 × 10¹¹ cm⁻²eV⁻¹ for the LPD-SiO2 thickness of 29 nm.