T. Iwasaki, Zhongwang Wang, J. Reynolds, M. Muruganathan, H. Mizuta
{"title":"Physisorption doping induced multiple dots behavior in graphene nanoconstrictions","authors":"T. Iwasaki, Zhongwang Wang, J. Reynolds, M. Muruganathan, H. Mizuta","doi":"10.23919/SNW.2017.8242333","DOIUrl":null,"url":null,"abstract":"We report the single carrier transport properties in the p-doped/less-doped graphene nanoconstriction structures. In the doped graphene devices, the overlapped Coulomb diamond characteristics are observed around the charge neutrality point (CNF) at 5 K. Reducing doping in graphene by annealing, the periodic peaks appear in the certain gate voltage range around the CNP. Additionally, the non-overlapped Coulomb diamond characteristic is observed. These results suggest that unintentional charging island formation in graphene nanodevices can be avoided by decreasing the doping concentration.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"04 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2017.8242333","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We report the single carrier transport properties in the p-doped/less-doped graphene nanoconstriction structures. In the doped graphene devices, the overlapped Coulomb diamond characteristics are observed around the charge neutrality point (CNF) at 5 K. Reducing doping in graphene by annealing, the periodic peaks appear in the certain gate voltage range around the CNP. Additionally, the non-overlapped Coulomb diamond characteristic is observed. These results suggest that unintentional charging island formation in graphene nanodevices can be avoided by decreasing the doping concentration.
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