{"title":"Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range","authors":"J. Darmo, F. Schaffer, A. Forster, P. Kordos","doi":"10.1109/ASDAM.2000.889470","DOIUrl":null,"url":null,"abstract":"Several topics related to the performance of a photoconductive mixer based on low-temperature-grown MBE GaAs are addressed. Approaches to a reduction of charge carrier lifetime and an improvement of the heat dissipation from structure are discussed. Relevant experimental data obtained for Be-doped GaAs are presented.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2000.889470","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Several topics related to the performance of a photoconductive mixer based on low-temperature-grown MBE GaAs are addressed. Approaches to a reduction of charge carrier lifetime and an improvement of the heat dissipation from structure are discussed. Relevant experimental data obtained for Be-doped GaAs are presented.
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