{"title":"High side power MOSFET switch driver for a low-power AC/DC converter","authors":"M. Potocný, J. Brenkus, V. Stopjaková","doi":"10.1109/DDECS.2019.8724667","DOIUrl":null,"url":null,"abstract":"With the emergence of always-on wireless sensing nodes, AC/DC power conversion solutions for sub 1 W applications are required. Existing approaches are not efficient for such output loads, and therefore, new solutions need to be provided. In this paper, we propose a solution that is optimized for operation with output loads up to 500 mW, while high efficiency and close to zero no-load consumption have been our foremost design goals. The proposed design is implemented in a high-voltage CMOS process and transistor level simulation results show improved properties of the proposed solution over the existing ones.","PeriodicalId":197053,"journal":{"name":"2019 IEEE 22nd International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 22nd International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DDECS.2019.8724667","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
With the emergence of always-on wireless sensing nodes, AC/DC power conversion solutions for sub 1 W applications are required. Existing approaches are not efficient for such output loads, and therefore, new solutions need to be provided. In this paper, we propose a solution that is optimized for operation with output loads up to 500 mW, while high efficiency and close to zero no-load consumption have been our foremost design goals. The proposed design is implemented in a high-voltage CMOS process and transistor level simulation results show improved properties of the proposed solution over the existing ones.
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