A method for FinFET intermodulation analysis from TCAD simulations using a time-domain waveform approach

Abstract

FinFETs are very promising for integrated circuit low signal anolog applications. In this paper we present, non-linear analysis of this type of devices using technology CAD (TCAD), which complements the already done studies about the advantages and possibilities of source/drain extension (SDE) engineering of FinFET for anolog applications. This is a simple and fast way to predict linearity using TCAD at an early stage FinFET design process. The method is based on time domain waveforms at drain and gate terminals at different input power level. By carrying out spectrum analysis of time-domain signals and knowing fundamental power Pfund and third order harmonics ( IM³ ) power at different input power have been used to determine third-order intercept ( IP3 ). The value of IP3 obtained using approach is found to ∼4dBm at Vg = 0.25V and Vd = 1.1V . Further on Vg is varied at fixed Vd = 1.1V , and effect of Vg on 3 fund IM3 / Pfund is investigated.