{"title":"Microbumping technology for hybrid IR detectors, 10μm pitch and beyond","authors":"B. Majeed, P. Soussan, P. Le Boterf, P. Bouillon","doi":"10.1109/EPTC.2014.7028336","DOIUrl":null,"url":null,"abstract":"In order to assess the feasibility of a more mass-manufacturable process, IMEC has developed microbump technologies down to 10μm pitch. The micro bumps are based on Cu/Ni/Sn semi additive plating and built at wafer level using a process fully compatible with standard packaging infrastructures. Different test materials with 15, 10 and even 5μm pitch Sn microbumps were processed for a total amount of 640 × 512 (VGA), 1024 × 768 (XGA) and 3072 × 3072 pixels respectively. The microbumped Si chips were assembled with glass chips, InGaAs and HgCdTe compounds and subjected to thermocycling reliability evaluation.","PeriodicalId":115713,"journal":{"name":"2014 IEEE 16th Electronics Packaging Technology Conference (EPTC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE 16th Electronics Packaging Technology Conference (EPTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPTC.2014.7028336","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
In order to assess the feasibility of a more mass-manufacturable process, IMEC has developed microbump technologies down to 10μm pitch. The micro bumps are based on Cu/Ni/Sn semi additive plating and built at wafer level using a process fully compatible with standard packaging infrastructures. Different test materials with 15, 10 and even 5μm pitch Sn microbumps were processed for a total amount of 640 × 512 (VGA), 1024 × 768 (XGA) and 3072 × 3072 pixels respectively. The microbumped Si chips were assembled with glass chips, InGaAs and HgCdTe compounds and subjected to thermocycling reliability evaluation.
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