Hybrid Cu-SiN and Cu-SiOx Direct Bonding of 200 MM CMOS Wafers with Five Metal Levels: Morphological, Electrical and Reliability Characterization

Abstract

In this paper is reported for the first-time wafer level electrical data on 200 mm wafer to wafer hybrid copper to dielectric bonding at low temperature, using SiN as the dielectric material. In this work was used up to five metal levels per wafer. SiN is here investigated for its feasibility to replace SiOx or SiCN in the hybrid bonding. Furthermore, for the first-time reliability testing is here reported when using either SiN or SiOx as the dielectric layer.