RF-Noise Modeling of InGaAs Metamorphic HEMTs and MOSFETs

F. Heinz, D. Schwantuschke, A. Leuther, A. Tessmann, M. Ohlrogge, R. Quay, O. Ambacher
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引用次数: 1

Abstract

The mechanisms causing the RF-noise in InGaAs metamorphic HEMTs and MOSFETs have been investigated and compared. A small signal model for InGaAs- metamorphic HEMTs and InGaAs MOSFETs, including an accurate description of the RF-noise, is presented. The model is based on a distributed multiport-network approach, which is scalable in gate width, the number of gate-fingers and covers usual bias points used in amplifier circuits. The noise model is capable of analyzing the sources of noise in InGaAs HEMTs and MOSFETs and their impact on the overall device noise figure. The new extracted MOSFET model is verified on circuit level in the W-Band (75 to 110GHz).
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InGaAs变质hemt和mosfet的射频噪声建模
研究并比较了InGaAs变质hemt和mosfet中射频噪声产生的机理。提出了InGaAs-变质hemt和InGaAs mosfet的小信号模型,包括对射频噪声的精确描述。该模型基于分布式多端口网络方法,在门宽、门指数量和覆盖放大器电路中常用的偏置点方面具有可扩展性。该噪声模型能够分析InGaAs hemt和mosfet中的噪声源及其对整体器件噪声系数的影响。新提取的MOSFET模型在w波段(75 ~ 110GHz)的电路电平上进行了验证。
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