Ashu Yadav, A. Bulusu, Sudeb Dasgupta, Surinder Singh
{"title":"Design and Fabrication of Rad-hard Low Power CMOS Temperature Sensor for Space Applications at 180nm","authors":"Ashu Yadav, A. Bulusu, Sudeb Dasgupta, Surinder Singh","doi":"10.1109/ICM52667.2021.9664963","DOIUrl":null,"url":null,"abstract":"In this paper we presented a CMOS proportional to absolute temperature (PTAT) sensor using subthreshold MOS devices and output of PTAT is 1Vpp to match the dynamic range of next stage data acquisition systems. The circuit is first evaluated using SPICE with 0.18μm CMOS device parameters across a wide-temperature range from −40°C to 125°C. The fabricated device occupies a die area of 0.013mm2 (=170µm X 78µm) and consumes power less than 15µW with 3.3V power supply. Radiation effects characterization and analysis has been done on PTAT.","PeriodicalId":212613,"journal":{"name":"2021 International Conference on Microelectronics (ICM)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 International Conference on Microelectronics (ICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM52667.2021.9664963","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper we presented a CMOS proportional to absolute temperature (PTAT) sensor using subthreshold MOS devices and output of PTAT is 1Vpp to match the dynamic range of next stage data acquisition systems. The circuit is first evaluated using SPICE with 0.18μm CMOS device parameters across a wide-temperature range from −40°C to 125°C. The fabricated device occupies a die area of 0.013mm2 (=170µm X 78µm) and consumes power less than 15µW with 3.3V power supply. Radiation effects characterization and analysis has been done on PTAT.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
