Improved electron-beam lithography with C60 fullerene for InP membrane waveguides

Y. Jiao, J. Pello, Longfei Shen, B. Smalbrugge, M. Smit, J. V. D. van der Tol
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引用次数: 1

Abstract

We present a method to prepare a mixed resist material composed of a positive electron-beam resist (ZEP520A) and C60 fullerene. The method is modified from previous methods in literatures to achieve an optimized mixing. An improvement of the mixed material on the thermal resistance respect to the same structures fabricated with normal ZEP resist has been demonstrated by fabricating multimode interference couplers and coupling regions of micro-ring resonators. An improvement on the propagation loss of the InP membrane waveguides from 6.6 to 3.3 dB/cm using this mixed material is also shown.
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改进的C60富勒烯电子束光刻技术用于InP膜波导
本文提出了一种由正电子束电阻(ZEP520A)和C60富勒烯组成的混合电阻材料的制备方法。该方法对文献中已有的方法进行了改进,实现了优化混合。通过制作多模干涉耦合器和微环谐振器的耦合区,证明了混合材料在热阻方面比用普通ZEP电阻制作的相同结构有所改善。使用这种混合材料后,InP膜波导的传输损耗从6.6 dB/cm提高到3.3 dB/cm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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