O. Dvornikov, N. Prokopenko, A. Bugakova, V. Tchekhovski, I. Maliy
{"title":"Cryogenic Operational Amplifier on Complementary JFETs","authors":"O. Dvornikov, N. Prokopenko, A. Bugakova, V. Tchekhovski, I. Maliy","doi":"10.1109/EWDTS.2018.8524640","DOIUrl":null,"url":null,"abstract":"Features of the design of operational amplifiers (Op-Amp) on complementary field effect transistors with p-n- junction (junction field-effect transistor, JFET) for operation under the influence of penetrating radiation (PR) and extremely low temperatures up to −197°C are considered. The original circuit of the Op-Amp and the results of its circuit simulation are given.","PeriodicalId":127240,"journal":{"name":"2018 IEEE East-West Design & Test Symposium (EWDTS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE East-West Design & Test Symposium (EWDTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EWDTS.2018.8524640","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15
Abstract
Features of the design of operational amplifiers (Op-Amp) on complementary field effect transistors with p-n- junction (junction field-effect transistor, JFET) for operation under the influence of penetrating radiation (PR) and extremely low temperatures up to −197°C are considered. The original circuit of the Op-Amp and the results of its circuit simulation are given.
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