N. Wu, Qingchun Zhang, Chunxiang Zhu, D. Chan, M. Li, N. Balasubramanian, A. Du, A. Chin, J. Sin, D. Kwong
{"title":"A novel surface passivation process for HfO/sub 2/ Ge MOSFETs","authors":"N. Wu, Qingchun Zhang, Chunxiang Zhu, D. Chan, M. Li, N. Balasubramanian, A. Du, A. Chin, J. Sin, D. Kwong","doi":"10.1109/DRC.2004.1367762","DOIUrl":null,"url":null,"abstract":"This work presents a novel surface passivation process for HfO/sub 2/ Ge MOSFETs which we have developed, using in-situ SiH/sub 4/ treatment prior to HfO/sub 2/ deposition. Results show that, compared to conventional surface nitridation, TaN/HfO/sub 2//Ge pMOSFETs with in-situ SiH/sub 4/ surface treatment have much reduced frequency dispersion and hysteresis, improved gate leakage distribution, better subthreshold swing and higher hole mobility.","PeriodicalId":385948,"journal":{"name":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2004.1367762","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This work presents a novel surface passivation process for HfO/sub 2/ Ge MOSFETs which we have developed, using in-situ SiH/sub 4/ treatment prior to HfO/sub 2/ deposition. Results show that, compared to conventional surface nitridation, TaN/HfO/sub 2//Ge pMOSFETs with in-situ SiH/sub 4/ surface treatment have much reduced frequency dispersion and hysteresis, improved gate leakage distribution, better subthreshold swing and higher hole mobility.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
![Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.](/Content/css/sci/img/zetp.jpg)
求助内容：
应助结果提醒方式：
扫码关注我们
