{"title":"Design & full-wave EM simulation of Ku-band orthomode transducer (OMT)","authors":"M. Latif, A. U. Salfi, M. Shafique","doi":"10.1109/IBCAST.2013.6512178","DOIUrl":null,"url":null,"abstract":"The paper describes the design and full-wave EM simulation of Ku-band (10.7-14.5) GHz orthomode transducer (OMT). The OMT designed is class 2 (symmetric OMT) which has higher fractional bandwidth and cross-polarization isolation than the class 1 OMT. It is realized with Modified Bfifot junction where the tuning pins are replaced with well placed capacitive steps. Moreover septum is four times thicker than conventional class 2 OMT, making it realizable up to 1 THz frequency. Cross-polarization isolation ≥ 80 dB and return loss ≥ 20 dB are achieved in the entire band. Effect of manufacturing tolerances and assembly misalignment are incorporated d the full-wave EM simulation. All the simulation & optimization work is done in industry standard EM Simulation software.","PeriodicalId":276834,"journal":{"name":"Proceedings of 2013 10th International Bhurban Conference on Applied Sciences & Technology (IBCAST)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 2013 10th International Bhurban Conference on Applied Sciences & Technology (IBCAST)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IBCAST.2013.6512178","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
The paper describes the design and full-wave EM simulation of Ku-band (10.7-14.5) GHz orthomode transducer (OMT). The OMT designed is class 2 (symmetric OMT) which has higher fractional bandwidth and cross-polarization isolation than the class 1 OMT. It is realized with Modified Bfifot junction where the tuning pins are replaced with well placed capacitive steps. Moreover septum is four times thicker than conventional class 2 OMT, making it realizable up to 1 THz frequency. Cross-polarization isolation ≥ 80 dB and return loss ≥ 20 dB are achieved in the entire band. Effect of manufacturing tolerances and assembly misalignment are incorporated d the full-wave EM simulation. All the simulation & optimization work is done in industry standard EM Simulation software.
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